Semiconductor structure and manufacturing method thereof

Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: at least one transistor, the transistor including: a channel region in a semiconductor layer; the grid electrode is at least located on one side of the channel region; the source region is located at the first end of the channel region; the drain electrode region is located at the second end of the channel region; the first end and the second end are two opposite ends of the channel region in a first direction, and the first direction is the thickness direction of the semiconductor layer; at least one of the source region and the drain region comprises a first layer region and a second layer region, and each of the source region and the drain region comprises a third layer region; the first layer region is positioned on one side close to the channel region; the third layer region is positioned on one side far away from the channel region; the second layer region is located between the first layer region and the third layer region; the doping type of the second layer region is different from those of the first layer region and the third layer region, or the second layer region is an intrinsic non-doped region. The parasitic capacitance of the transistor can be reduced, and the response speed of the transistor can be improved.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and relates to, but is not limited to, a semiconductor structure and a fabrication method thereof. Background technique [0002] Transistors in semiconductor structures are widely used as switching devices or driving devices in electronic equipment. For example, transistors may be used in Dynamic Random Access Memory (DRAM) to control each memory cell. It can be understood that the basic memory cell structure of the dynamic random access memory consists of a transistor and a storage capacitor, and its main function principle is to use the amount of stored charge in the capacitor to represent whether a binary bit (bit) is 1 or 0. [0003] However, the existing transistors still have many problems that need to be improved. SUMMARY OF THE INVENTION [0004] In order to solve one or more of the related technical problems, embodiments of the present invention provide a semiconduct...

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Problems solved by technology

[0003] However, there are still many problems in the existing transistors that need to be improved urgently.

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