Formation method of semiconductor structure
A semiconductor, source-drain technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effects of improving production efficiency, reducing barriers, and reducing production costs
Pending Publication Date: 2022-07-26
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, there are still many problems in the LDD ion implantation process in the prior art
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0024] As mentioned in the background art, there are still many problems in the LDD ion implantation process in the prior art. The following will be described in detail with reference to the accompanying drawings.
[0025] Figure 1 to Figure 4 It is a schematic diagram of the formation process of a semiconductor structure.
[0026] Please refer to figure 1 , a substrate 100 is provided, the substrate 100 includes a first region I and a second region II, the first region I has a plurality of first dummy gate structures 101 arranged in parallel, and the second region II has a plurality of second dummy gate structures 102 arranged in parallel; a first sacrificial layer 103 is formed on the second region II, the first sacrificial layer 103 covers the second dummy gate structure 102; in the first region Several initial first lightly doped regions 104 are formed in the I, and the initial first lightly doped regions 104 are located between the adjacent first dummy gate structures...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| relative permittivity | aaaaa | aaaaa |
| relative permittivity | aaaaa | aaaaa |
Login to View More
Abstract
A forming method of a semiconductor structure comprises the steps that a substrate is provided, the substrate comprises a first region, the first region comprises a first peripheral region and a first core region, the first peripheral region is provided with a first pseudo gate structure, and the first core region is provided with a second pseudo gate structure; forming a first sacrificial layer exposing the first region; forming a first source-drain opening and a second source-drain opening in the first region by taking the first sacrificial layer as a mask; and forming a first lightly doped region on the side wall and the bottom surface of the first source-drain opening by taking the first sacrificial layer as a mask. The manufacturing procedures of the first source-drain opening, the second source-drain opening and the first lightly doped region can be completed at the same time through the first sacrificial layer, the number of the sacrificial layers is effectively reduced, the production cost is further reduced, and the production efficiency is improved. Besides, the first lightly doped region is formed after the first source-drain opening is formed, and the blocking of the first peripheral region is reduced, so that the ion implantation energy, the ion implantation dosage and the ion implantation time when the first lightly doped region is formed can be effectively reduced.
Description
technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a method for forming a semiconductor structure. Background technique [0002] As the channel length of semiconductor devices shrinks, in order to obtain the required drive current and suppress the short channel effect, a better concentration of doped semiconductor substrate and source / drain is usually used, so that the depletion of the source / drain The area generates a high electric field. When the high-voltage input / output device operates in a saturated current state, the charges in the inversion layer are accelerated by the lateral electric field on the channel surface and ionize by collision with the crystal lattice, resulting in a large number of hot carriers (electron-hole pairs) . Hot electrons and hot holes can be emitted to the gate dielectric layer across the interface barrier to form a hot carrier injection (HCI). The hot carriers ent...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66598H01L29/7833
Inventor 杨震张银艳
Owner SEMICON MFG INT (SHANGHAI) CORP