Photoresist removal method and semiconductor device manufacturing method
A device manufacturing method and photoresist technology, which is applied in the direction of photosensitive material processing, etc., and can solve problems such as device damage
Pending Publication Date: 2022-07-29
度亘核芯光电技术(苏州)有限公司
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Problems solved by technology
However, the step of removing residual photoresist needs to be carried out in a hydrogen-containing gas environment such as ammonia gas. At this time, the ambient temperature is kept at a high temperature (not lower than 290°C), so the device will continue to be in a high-temperature environment for a long time, causing the device Easily damaged by prolonged high temperature
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Embodiment
[0034] like figure 1 As shown, the photoresist removal method provided in this embodiment includes:
[0035] Step S1: peel off the photoresist 2 on the device 1 with the photoresist 2 attached to obtain the device 1 with the residual photoresist attached;
[0036] Step S2: placing the device 1 with the residual photoresist attached in the chamber, adjusting the ambient temperature in the chamber to the first temperature, adjusting the ambient pressure in the chamber to the first pressure, and passing the first temperature into the chamber. A flow of hydrogen-containing gas to soften the residual photoresist 2 on the device 1;
[0037] Step S3: adjusting the ambient temperature in the chamber to a second temperature higher than the first temperature, adjusting the ambient pressure in the chamber to a second pressure higher than the first pressure, and introducing a second flow of hydrogen-containing gas into the chamber , to remove the residual photoresist 2 on the device 1; ...
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The invention provides a photoresist removal method and a semiconductor device manufacturing method, and relates to the technical field of semiconductor device preparation. The photoresist removal method comprises the following steps: stripping photoresist of a device to obtain a device attached with residual photoresist; placing the device attached with the residual photoresist in a chamber, adjusting the ambient temperature in the chamber to a first temperature, adjusting the ambient pressure to a first pressure, and introducing a first flow of hydrogen-containing gas into the chamber to soften the residual photoresist of the device; increasing the ambient temperature in the chamber to a second temperature, increasing the ambient pressure to a second pressure, and introducing a second flow of hydrogen-containing gas into the chamber to remove the residual photoresist; the second flow is smaller than the first flow. According to the photoresist removal method, the residual photoresist is softened at the relatively low first temperature and then is removed at the relatively high second temperature by using the hydrogen-containing gas, so that the processing rate can be improved, and the device can be prevented from being damaged due to long-time high-temperature environment.
Description
technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to a method for removing photoresist and a method for manufacturing a semiconductor device. Background technique [0002] The existing semiconductor device preparation process is usually as follows: coating photoresist on the substrate - exposure - photoresist development - dry / wet etching out the mask pattern - using high pressure NMP (N-methylpyrrolidone, abbreviated as Stripping photoresist for NMP)—using ammonia gas and other hydrogen-containing gas to remove residual photoresist—in PECVD (Plasma Enhanced Chemical VaperDeposition, plasma-enhanced chemical vapor deposition, abbreviated as PECVD) equipment to remove the photoresist lining Bottom coating. [0003] In the existing semiconductor device preparation process, when high-voltage NMP is used to peel off the photoresist, it is usually difficult to completely remove the photoresist. In order to remo...
Claims
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IPC IPC(8): G03F7/42
CPCG03F7/42
Inventor 于良成杨国文惠利省
Owner 度亘核芯光电技术(苏州)有限公司