Novel resonance enhanced photoelectric detector and manufacturing method thereof

Abstract

The invention discloses a novel resonance enhancement type photoelectric detector and a manufacturing method, relates to the technical field of semiconductors, and particularly belongs to the novel resonance enhancement type photoelectric detector and the manufacturing method. The device is characterized by comprising a superstructure layer, a substrate layer, a first distributed Bragg reflector, a resonant cavity layer, a second distributed Bragg reflector, an isolation layer, a buffer epitaxial layer, a first contact layer, an intrinsic layer, an intrinsic absorption layer, a P-type doped InAlAs layer and a second contact layer. The second distributed Bragg reflector, the isolation layer, the buffer epitaxial layer and the first contact layer are etched to form a first cylindrical table body stacked on the resonant cavity layer, and the intrinsic layer, the intrinsic absorption layer and the P-type doped InAlAs layer are etched to the second contact layer to form a second cylindrical table body stacked on the first contact layer. The invention has the positive effects of improving photoelectric conversion efficiency and quantum efficiency and realizing multi-wavelength detection and sensing functions.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a novel resonance-enhanced photodetector and a manufacturing method. Background technique [0002] For a long time, various key technologies have been researched around optoelectronic systems, and the realization of photodetectors with high integration, high performance, multi-function, low power consumption, and low cost has become a major new challenge. [0003] Traditional photodetectors have always been at the level of low power and can only achieve traditional functions, which greatly restricts the application of such devices. It was not until the development of detector material growth and preparation technology in recent years that the power level began to be obtained. Significant improvement, thus opening up broad prospects for the application and development of photodetectors. With the continuous improvement of photodetector power, the high threshold current of t...

AI Technical Summary

Problems solved by technology

As the power of photodetectors continues to increase, the traditional photodetectors have a high threshold current, low photoelectric conversion efficiency, and limited functions, which limit the further development of photodetectors.

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