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Humidity sensing structure, humidity sensor and manufacturing method of humidity sensing structure

A humidity sensor and humidity sensing technology, applied in the direction of material capacitance, etc., can solve the problems of slow adsorption and desorption of water molecules, hysteresis, and less sensitive humidity changes, so as to save production process, avoid leakage, and facilitate The effect of preparation

Inactive Publication Date: 2022-08-05
MEMSENSING MICROSYST SUZHOU CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, capacitive humidity sensors mostly use polyimide (abbreviated as PI) as the moisture-sensing layer material, which absorbs and desorbs water molecules at a slow rate, and is not too sensitive to full-scale humidity changes, resulting in a slow response speed of the humidity sensor. , sensitivity, hysteresis and other characteristics are not ideal enough to fully meet the needs of practical applications

Method used

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  • Humidity sensing structure, humidity sensor and manufacturing method of humidity sensing structure
  • Humidity sensing structure, humidity sensor and manufacturing method of humidity sensing structure
  • Humidity sensing structure, humidity sensor and manufacturing method of humidity sensing structure

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Embodiment 1

[0054] figure 1 is a schematic diagram of a plane structure of a humidity sensor proposed according to an embodiment of the present invention, figure 2 Yes figure 1 The schematic diagram of the partial plane structure of the humidity sensor in the middle after removing the humidity-sensitive medium, Figure 3A Yes figure 1 The schematic diagram of the cross-sectional structure along the A-A' direction, Figure 3B Yes Figure 3A Schematic diagram of the enlarged structure at B.

[0055] like figure 1 , figure 2 , Figure 3A , Figure 3B As shown, the humidity sensing structure 1 of the embodiment of the present invention includes: a substrate 5; a first dielectric layer 6 covering the substrate 5, at least one heating electrode 8 on the first dielectric layer 6, a package The second dielectric layer 90 covering the at least one heating electrode 8, and the humidity-sensitive capacitive layer 200 on the second dielectric layer 90; wherein, the humidity-sensitive capac...

Embodiment 2

[0095] 6A-6E It is a schematic diagram of a manufacturing process of a method for manufacturing a humidity sensing structure according to another embodiment of the present invention. The following will combine 6A-6E The embodiments of the present invention will be described in detail.

[0096] The difference between this embodiment and the previous embodiments is that, as Figure 6A As shown, the second dielectric layer 90 is provided with a groove 91 corresponding to the first humidity-sensitive electrode 21 and the second humidity-sensitive electrode 22 , and the groove 91 can pass through the second dielectric layer 90 obtained by performing a mask etching process on it. Then, as Figure 6B As shown, a second metal layer is fabricated on the second dielectric layer 90, and the first humidity-sensitive electrode 21 and the second humidity-sensitive electrode 22 are formed on the second metal layer through a photolithography mask process, and The first finger-shaped el...

Embodiment 3

[0101] Figures 7A-7E It is a schematic diagram of a manufacturing process of a manufacturing method of a humidity sensing structure according to another embodiment of the present invention. The following will combine Figures 7A-7E The embodiments of the present invention will be described in detail.

[0102] The difference between this embodiment and the previous embodiments is that, as Figure 7A and combine Figure 3A , Figure 3B As shown, bosses 92 are disposed on the second dielectric layer 90 , and the bosses 92 can be obtained by performing a mask etching process on the second dielectric layer 90 . For example, the boss 92 is disposed at a position corresponding to the gap between the first humidity sensing electrode 21 and the second humidity sensing electrode 22 . Then, as Figure 7B As shown, a second metal layer is fabricated on the second dielectric layer 90, and the first humidity-sensitive electrode 21 and the second humidity-sensitive electrode 22 are fo...

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Abstract

The invention provides a humidity sensing structure, a humidity sensor and a manufacturing method of the humidity sensing structure, a first humidity sensitive electrode and a second humidity sensitive electrode are arranged on the surface of one side, far away from at least one heating electrode, of a second dielectric layer at a preset gap, and the second dielectric layer is used as an insulating protective layer; the first dielectric layer and the second dielectric layer form a whole to cover the heating electrode together, so that water vapor can be prevented from permeating into the heating electrode, the heating electrode can be protected from being oxidized by water and oxygen in the air, the situation of electric leakage of the heating electrode can be avoided, and the heating electrode is safer and more reliable to use.

Description

technical field [0001] The present invention relates to the field of humidity sensors, in particular to a humidity sensing structure, a humidity sensor and a manufacturing method of the humidity sensing structure. Background technique [0002] Humidity reflects the amount of water vapor in the atmosphere at a certain temperature. This physical quantity is widely used in military, meteorological agriculture, industry, medical treatment, construction and household appliances. [0003] Humidity sensor is a device that can convert humidity into electrical signals that can be received and processed by external equipment, including capacitive, resistive and piezoresistive humidity sensors. Features are the most widely used. The working principle of the capacitive humidity sensor is: after the electrolyte adsorbs water vapor molecules, the dielectric constant of the mixed medium changes, resulting in a change in capacitance. Therefore, the selection of the moisture-sensing layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/22
CPCG01N27/223
Inventor 李萍萍
Owner MEMSENSING MICROSYST SUZHOU CHINA