Plasma cleaning method

Abstract

The invention provides a plasma cleaning method, which is used for removing by-products in a process chamber of semiconductor process equipment, and comprises the following steps: a first cleaning step: removing metal by-products in an upper region of the process chamber; a second cleaning step of removing the organic by-product in an upper region of the process chamber; a third cleaning step of removing the organic by-product in a lower region of the process chamber; and a fourth cleaning step of removing the metal by-product in the lower region of the process chamber. According to the plasma cleaning method provided by the invention, the whole area of the process chamber can be comprehensively cleaned, the cleaning effect is effectively improved, MTBC can be prolonged, and the equipment utilization rate can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a plasma cleaning method. Background technique [0002] Byproducts generated during the plasma etching process (including photoresist, etch precursors, and etch products, etc.) are deposited on the cavity and other surfaces of the process chamber. These byproducts not only cause process drift, but also It will bring wafer defects and affect the final yield. Therefore, the process chamber needs to be wet-cleaned with a chemical solution at regular intervals. However, wet cleaning is time-consuming. For this reason, plasma waferless auto clean (WAC) technology is usually used to clean the process chamber, thereby extending the mean time between clean (MTBC). . [0003] However, the existing plasma cleaning method cannot guarantee comprehensive cleaning of the entire region (including the upper region and the lower region) of the process chamber, and the cleaning by-pro...

AI Technical Summary

Problems solved by technology

However, wet cleaning is very time-consuming. For this, plasma waferless self-cleaning (waferless auto clean, WAC) technology is usually used to clean the process chamber, thereby prolonging the mean time between wet cleaning (Mean Time Between Clean, MTBC)

[0003] However, the existing plasma cleaning method cannot guarantee a comprehensive cleaning of the entire area of ​​the process chamber (including the upper area and the lower area), and the cleaning by-products are single, and the cleaning effect is poor.

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