Method for manufacturing semiconductor memory components

Abstract

The invention relates to a manufacturing method of a semiconductor memory (mask type read-only memory), comprising the following steps: forming a pad oxide layer and a bottom anti-reflection layer on a semiconductor substrate; Resist layer; define a pattern on the photoresist layer and form a plurality of openings corresponding to the extension direction of the bit line; use the photoresist pattern as a mask to implant arsenic ions into the semiconductor substrate; use the photoresist The pattern is a mask, and boron ions are implanted in the semiconductor substrate, and the implantation depth of the boron ions is greater than that of the arsenic ions; the photoresist, the bottom anti-reflection layer and the pad oxide layer are removed; forming a gate oxide layer and a field oxide layer on the semiconductor substrate; and depositing a gate conductive layer on the semiconductor substrate.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor storage element, in particular to a manufacturing method of a mask type read-only memory. Background technique [0002] Among semiconductor memory devices, mask read only memory (Mask Read Only Memory, Mask ROM) is one of the non-volatile memories, mainly after the power is turned off, the data can still be saved without loss. During the manufacturing process of this type of mask-type ROM, a photomask is used to determine the connection status of transistors in the memory cell array to achieve the purpose of storing data. Therefore, there is no need to substantially modify the manufacturing process due to product changes, and only need to replace the photomask to change. Therefore, once the data is written, it cannot be changed. It is mainly used as low-cost, high-reliability and large-capacity memory. It is widely used in various electronic products such as information, communication,...

AI Technical Summary

Problems solved by technology

[0010] Furthermore, in the existing manufacturing method, the silicon nitride layer must be used as a mask to form the field oxide layer first, and then remove the silicon nitride layer to continuously form the gate oxide layer.

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