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Method of decreasing charges loss in non-volatile memory

A non-volatile memory and charge loss technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., and can solve the problems of cleaning unclean ions, residues, charge loss, etc.

Inactive Publication Date: 2005-07-13
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after a series of complicated etching and deposition procedures, some reactive or protective ions are often introduced during the implementation process, such as: reactive ion etching (reaction ionetch; RIE), plasma enhanced chemical vapor deposition (plasma enhanced chemical vapor deposition) ; PECVD)... etc., there are often residual ions in the device that are not cleaned
Therefore, after the memory device is programmed, after a period of time, the residual ions tend to further interact with the charges in the memory device, resulting in charge loss.

Method used

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  • Method of decreasing charges loss in non-volatile memory

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Embodiment Construction

[0018] Please also refer to figure 1 and Figures 2A-2D . in, figure 1 It is a manufacturing flow chart according to the present invention. Figures 2A-2D It is a sectional view of the manufacturing process according to the present invention.

[0019] First, as in step 300, a semiconductor substrate 102 is provided, wherein the surface of the substrate 102 has any possible existing non-volatile memory devices 104, such as erasable programmable read-only memory (erasable programmable read-only memory; EPROM), electrically erasable programmable read-only memory (electrically erasable programmable read-only memory; EEPROM) or flash memory (flash memory)...etc. In this embodiment, a flash memory is taken as an example, and its device 104 includes a floating gate 104a, a dielectric layer 104b, a control gate 104c, and a tunnel oxide (tunnel oxide) 104d, as Figure 2A shown.

[0020] Next, as in step 302, a dielectric layer 106 is formed on the surface of the substrate 102 by ...

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Abstract

The invention relates to a method for reducing the charge loss of non-volatile memory, which uses a reactive gas to combine with ions and unstable free radicals remaining on the substrate surface in the manufacturing process, or uses an anion radical to combine with the residual ions in the manufacturing process The cations on the surface of the substrate form stable ionic bonds to avoid charge loss in the nonvolatile memory.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process method, in particular to a non-volatile memory manufacturing process method. In this way, the loss of charge in the non-volatile memory can be avoided. Background technique [0002] Memory, as the name implies, is a semiconductor device used to store data. When the function of the computer microprocessor (microprocessor) becomes stronger and stronger, the programs and calculations performed by the software become larger and larger, and the demand for memory becomes higher and higher. In order to manufacture large-capacity and cheap memory to meet this demand, the technology and manufacturing process of making memory have become the driving force for semiconductor technology to continue to challenge higher integration. [0003] Memory can be divided into two categories: volatile memory and non-volatile memory. Both dynamic random access memory (DRAM) and static random access memory (SRAM) ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/31H01L21/3205H01L21/324H01L21/82
Inventor 曾铕张庆裕邱宏裕吕文彬
Owner MACRONIX INT CO LTD