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Heat shielding method and heat shield for vertically pulling crystal furnace

A heat shield, single crystal furnace technology, applied in single crystal growth, chemical instruments and methods, self-melting liquid pulling method, etc., can solve the problems of no reduction, shortened process time, no explanation, etc. Good control and thermal insulation effect

Inactive Publication Date: 2005-08-17
有研半导体硅材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] According to the patent literature, this heat shield reduces the overall temperature gradient, reduces a large number of defects, and shortens the process time. It can measure the diameter of the single crystal silicon rod during the drawing process, but it does not explain how to adjust the value of η to Reduction of defects in crystal growth, no data proof for reduction of large number of defects

Method used

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  • Heat shielding method and heat shield for vertically pulling crystal furnace
  • Heat shielding method and heat shield for vertically pulling crystal furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The heat shield is installed on the liquid surface of the silicon melt, around the silicon single crystal rod drawn from the quartz crucible containing the silicon melt in the single crystal furnace, the heat shield shell 19 and the heat shield inner shell 20 The distance h from the intersection point of the lower end to the liquid surface of the silicon melt is 5mm, the distance L between the intersection point of the lower end of the heat shield shell 19 and the heat shield inner shell 20 and the silicon single crystal rod is 12% of the diameter of the silicon single crystal rod, and the included angle θ is 70 °. The heat shield used is as mentioned above, the θ angle is 70°, the heat shield outer shell 19 and the heat shield inner shell 20 are made of semiconductor grade graphite, and the heat shield upper cover and the heat field upper cover are made of semiconductor grade graphite to form a heat shield The insulation material of the insulation layer 22 and the insu...

Embodiment 2

[0031] Its operation method and heat shield are exactly the same as in Example 1, except that the distance h is 50 mm, the angle θ is 25°, and silicon single crystal ingots dominated by "vacancies" are produced.

Embodiment 3

[0033] Its operation method and heat shield are exactly the same as in Example 1, except that the distance h is 30mm, θ is 40°, and the region from the center of the circle to 1 / 2R of the produced single crystal is dominated by "interstitial atoms" , the area from 1 / 2R to the outer edge of the circle is dominated by "vacancies", and the above all refer to the cross-section of the silicon single crystal rod.

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Abstract

The present invention relates to a heat field shileding method and heat shield for vertically pulling silicon single crystal furnace. The heat shield is mounted over the silicon melt surface and around the monocrystalline silicon rod. The heat shield includes heat shield comprising outer casing, inner casing, upper cover and heat insulating layer; heat field top cover, and upper heat insulating tube below the heat field top cover. The heat field shielding method of the present invention can regulate eta value, so as to produce monocrystalline silicon rod with "vacancy" or "interstitial atom" as dominant. The heat shield has excellent heat insulating effect.

Description

1. Technical field [0001] The present invention relates to the heat shielding of single crystal furnace for growing single crystal semiconductor material and its device, more specifically to the heat shielding method and its device for producing single crystal silicon rods - heat shielding device. 2. Background technology [0002] Most semiconductor silicon single crystals are produced by the Czochralski method. In this method, polysilicon is put into a quartz crucible, heated and melted, and then the temperature of the molten silicon is slightly lowered, and a certain degree of supercooling is given, and a silicon single crystal (called a seed crystal) with a specific crystal orientation is combined with the molten silicon. Bulk silicon contact, by adjusting the temperature of the melt and the upward lifting speed of the seed crystal, when the seed crystal grows to a diameter close to the target, increase the lifting speed to make the single crystal grow with a nearly const...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00
Inventor 屠海令周旗钢张果虎吴志强戴小林方锋
Owner 有研半导体硅材料股份有限公司