Electricity induction soure-drain extended zone MOS transistor and its making method
A MOS transistor, source-drain extension region technology, applied in transistors, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as limiting driving current, improving lithography accuracy, and achieving threshold voltage optimization, solving manufacturing problems, process Simple and easy effects
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[0097] 1. Inductive source-drain extension region MOS transistor structure
[0098] Such as figure 2 As shown, the MOS transistor structure of the induced source-drain extension region, the gate of the induction source-drain region is served by an inverted polysilicon sidewall 23, the source-drain extension region is generated by electrical induction of the inverted polysilicon, and the channel region is located between the two inverted polysilicon sidewalls between two inverted polysilicon sidewalls; the gate electrode is a T-shaped polysilicon gate 21, and there is a silicon dioxide isolation layer 22 between the gate electrode and the inverted polysilicon sidewall; the gate electrode and the inverted polysilicon sidewall are both There is an oxide layer; the channel region and the source and drain extension regions are doped independently.
[0099] 2. Preparation process of MOS transistor structure with inductive source-drain extension region
[0100] The main process ste...
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