Electricity induction soure-drain extended zone MOS transistor and its making method
A MOS transistor, source-drain extension region technology, applied in transistors, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as limiting driving current, improving lithography accuracy, and achieving threshold voltage optimization, solving manufacturing problems, process Simple and easy effects
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[0097] 1. The structure of the MOS transistor in the inductive source-drain extension region
[0098] like figure 2 As shown, the induction source-drain extension region MOS transistor structure, the gate of the induction source-drain region is used as the inverted polysilicon sidewall 23, the source-drain extension region is generated by electrical induction of the inverted polysilicon, and the channel region is located between the two inverted polysilicon sidewalls. between the two inverted polysilicon sidewall spacers; the gate electrode is a T-type polysilicon gate 21, and there is a silicon dioxide isolation layer 22 between the gate electrode and the inverted polysilicon sidewall spacer; the gate electrode and the inverted polysilicon sidewall spacer are both With oxide layer: the channel region and the source-drain extension region are independently doped.
[0099] 2. Fabrication process of the MOS transistor structure in the inductive source-drain extension region
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