Unlock instant, AI-driven research and patent intelligence for your innovation.

Magnetic resistance effect device, magnetic head, magnetic recording equipment and storage device

A storage device, magnetoresistance technology, applied in the direction of recording information storage, magnetic recording, magnetic recording head, etc., can solve the problems of inability to eliminate, deterioration of the characteristics of the magnetoresistance effect device, etc.

Inactive Publication Date: 2005-10-05
PANASONIC CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in this case, the thickness of the exchange-coupled non-magnetic layer is about 0.6-0.8 nm, so that diffusion occurs in the interface of the exchange-coupled non-magnetic layer at a temperature of 300° C. or higher, so that this Deterioration of the characteristics of the magnetoresistance effect device
That is, the above-mentioned problems cannot be eliminated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic resistance effect device, magnetic head, magnetic recording equipment and storage device
  • Magnetic resistance effect device, magnetic head, magnetic recording equipment and storage device
  • Magnetic resistance effect device, magnetic head, magnetic recording equipment and storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0098] Using Si as a substrate and Cr, Pt, CoPt, Ir, CoFe, Al, Cu, and NiFe as targets, the magnetoresistance effect device 100 shown in FIG. 1 was manufactured by sputtering. In step 1, a Cu / Pt / Cr film with a thickness of 50 nm was formed on a Si substrate as a lower electrode. Then, a magnetoresistance effect device having the following structure was fabricated on the Cu / Pt / Cr film.

example

[0099] Example sample 1: CoPt(25) / CoFe(3) / IrO(0.8) / CoFe(3) / Al 2 o 3 (1.4) / CoFe(1) / NiFe(3),

[0100] Here, the numbers in parentheses indicate the thickness (nm) of the film. After the formation of Ir and Al films, IrO and Al are formed by natural oxidation 2 o 3 membrane.

[0101] In Example Sample 1, CoPt and CoFe correspond to the magnetic film 106 shown in FIG. 1 . IrO corresponds to the nonmagnetic layer 104 for exchange coupling. CoFe corresponds to the magnetic film 105 . Al 2 o 3 Corresponds to the non-magnetic film 103 . CoFe and NiFe correspond to the free layer 101 .

[0102] A magnetoresistance effect device of 1 µm x 1 µm was formed from Example Sample 1 by photolithography. Al is used for the periphery of the magnetoresistance effect device 2 o 3 insulation and form a through hole. A Cu / Pt film was formed on the structure thus formed so that the thickness of the upper electrode was 50 nm. The magnetoresistance effect device thus fabricated was heat-...

Embodiment 2

[0106] Using Si as a substrate and Pt, Ru, PtMn, CoFe, Cu, Al, NiFe, NiFeCr as targets, the magnetoresistance effect device 200 shown in FIG. 2 was manufactured by sputtering. In Step 1, a Cu / Pt film with a thickness of 50 nm was formed on a Si substrate as a lower electrode. Next, a magnetoresistance effect device having the following structure was fabricated on the Cu / Pt film.

[0107] Example sample 2: PtMn(25) / CoFe(3) / RuO(0.8) / CoFe(3) / Al 2 o 3 (1.4) / CoFe(1) / NiFe(4),

[0108] In addition, a magnetoresistance effect device including a NiFeCr underlayer for the PtMn layer was fabricated.

[0109] Example Sample 2A: NiFeCr(4) / PtMn(25) / CoFe(3) / RuO(0.8) / CoFe(3) / Al 2 o 3 (1.4) / CoFe(1) / NiFe(4),

[0110] For comparison, a sample having a conventional structure as shown below was produced.

[0111] Conventional sample A: PtMn(25) / CoFe(6) / Al 2 o 3 (1.2) / CoFe(1) / NiFe(4).

[0112] In Example Sample 2, PtMn corresponds to the antiferromagnetic layer 201 shown in FIG. 2 . CoFe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A magnetoresistance effect device includes: a free layer whose magnetization direction is easily rotated by an external magnetic field; a non-magnetization layer; and a pinned layer whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer which is opposite to a face on which the free layer is formed, wherein the pinned layer includes: a first non-magnetic film for exchange-coupling; and first and second magnetic films which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film, and the first non-magnetic film includes one of the oxides of Ru, Ir, Rh, and Re.

Description

(1) Technical field [0001] The invention relates to a thermostable magnetoresistance effect device, a magnetic head, a magnetic recording device and a storage device using the thermostable magnetoresistance effect device. (2) Background technology [0002] In recent years, in a magnetoresistance effect device including a layered structure of a ferromagnetic layer (free layer) / nonmagnetic layer / ferromagnetic layer (pinned layer), the use of a metal such as Cu in the nonmagnetic layer The study of the GMR (giant magnetoresistance) device of the film and the use of such as Al in this non-magnetic layer 2 o 3 Research on channel-type magnetoresistance effect devices called TMR devices such as insulating layers has become popular (Journal of Magnetism and Magnetic Materials, 139 (1995), L231). Applications of the GMR device and the TMR device to magnetic heads and memory devices have been studied (2000 IEEE ISSCC TA7.2, TA7.3). There has been an application of this GMR device ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R33/09G11B5/00G11B5/39G11C11/15H01F10/32H10B20/00
CPCB82Y10/00H01L43/08G01R33/093G11B5/3909B82Y25/00G11C11/16H01L27/228G11B5/3903G11B5/00H01F10/3272G11B2005/3996H10B61/22H10N50/10G11B5/39
Inventor 榊间博川分康博杉田康成
Owner PANASONIC CORP