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Chemical etching method for zinc oxide material

A technology of chemical etching and zinc oxide, which is applied in the field of chemical etching of zinc oxide materials, can solve the problem of fast edge and slow center of etch rate

Inactive Publication Date: 2007-01-10
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In view of the above problems, the object of the present invention is to provide a kind of oxidizer that overcomes the problem of fast edge and slow center of etching rate when etching samples with common acid solution, and integrates the advantages of smooth etching surface and controllable etching rate. Chemical etching method of zinc material

Method used

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  • Chemical etching method for zinc oxide material
  • Chemical etching method for zinc oxide material
  • Chemical etching method for zinc oxide material

Examples

Experimental program
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Effect test

Embodiment 1

[0024] A method of etching a single crystal thin film of gallium-doped n-type zinc oxide material, first using standard photolithography techniques to fabricate such as Figure 5 The mask shown, and use the dektek 8 surface topography instrument to measure the thickness h of the mask 0 , and then, using a concentration of 0.4mM ferric chloride (FeCl 3 ) solution for etching, and use a dektak 8 surface topography instrument to measure the thickness h of the mask after etching 1 . There are definite experiments to prove that ferric chloride has no etching effect on the mask, so h 1 -h 0 is the etched thickness. The etching was carried out stably at a rate of 32nm / min, and finally a flat etching surface was obtained on the single crystal thin film.

Embodiment 2

[0026] A method of etching a single crystal thin film of gallium-doped n-type zinc oxide material, first using standard photolithography techniques to fabricate such as Figure 5 The mask shown, and use the dektek 8 surface topography instrument to measure the thickness h of the mask 0 , and then use a concentration of 40mM ferric chloride (FeCl 3 ) solution to etch the sample for 10 seconds, the measured etching depth is 220nm, and the etching rate is 1300nm / min, and finally a flat etching surface is obtained on the single crystal thin film.

Embodiment 3

[0028] A method of etching a single crystal thin film of gallium-doped n-type zinc oxide material, first using standard photolithography techniques to fabricate such as Figure 5 The mask shown, and use the dektek 8 surface topography instrument to measure the thickness h of the mask 0 , and then use a concentration of 0.6mM ferric chloride (FeCl 3 ) solution for etching, the etching rate was 900nm / min, and finally a flat etching surface was obtained on the single crystal thin film.

[0029] Zinc oxide material etched by ferric chloride solution, the flat "U" type etching profile measured by dektak 8 surface topography instrument, as image 3 As shown, from top to bottom are the cross-sectional views before etching, etching for 2 minutes, etching for 4 minutes, and etching for 6 minutes.

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Abstract

The invention opened a method for chemical etching about zinc oxide material. Process: the mask of zinc oxide was made, then, the chemical milling was proceeded in the FeCl3 solution or FeCl3 acid solution. In the method, the milled surface was smooth because the FeCl3 solution. At the same time, the etching speed was controlled by the different FeCl3 solution. And, the depth of etching can be controlled by the time.

Description

technical field [0001] The invention relates to a chemical etching method for zinc oxide material. Background technique [0002] Zinc oxide (ZnO), as a third-generation semiconductor material, has very broad application prospects in optoelectronic devices and microwave devices. Etching is a very necessary step in the manufacturing process of common optoelectronic and microwave devices such as light-emitting diodes, laser diodes, photodetectors, high-mobility transistors, and heterojunction bipolar transistors. [0003] Etching is usually divided into two types: dry etching and wet etching, and wet etching is divided into chemical etching and electrochemical etching. Among them, chemical etching has low cost (no dry etching is required). It is widely used due to its advantages such as expensive plasma equipment such as etching), controllable etching rate, simple operation and wide application range. [0004] The existing chemical etching methods for zinc oxide materials mai...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/02C23F1/14C23F1/16
Inventor 郑浩杜小龙薛其坤顾长志
Owner INST OF PHYSICS - CHINESE ACAD OF SCI