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Coding implantation technology

A coding and process technology, applied in the field of code implantation technology, can solve the problems of critical size deviation, high cost of exposure machine, expensive photoresist material, etc., and achieve the effect of reducing process cost

Inactive Publication Date: 2007-07-04
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this way, not only the cost of the exposure machine itself is high, but also the photoresist material used with it is also relatively expensive.
[0006] Furthermore, if the code mask used in the code implantation process has misalignment or critical dimension deviation, the code ions originally planned to be implanted in the channel region will diffuse to the buried bit line. In, the ion concentration in the buried bit line changes, which in turn affects the current of the buried bit line

Method used

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  • Coding implantation technology
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no. 1 example

[0032] FIG. 1A to FIG. 1D are schematic cross-sectional flow diagrams of the code implantation process of mask-mode ROM devices according to a preferred embodiment of the present invention.

[0033] Referring to FIG. 1A , firstly, a plurality of buried bit lines 102 are formed in a substrate 100 . Next, a gate oxide layer 104 is formed on the surface of the substrate 100 by using a thermal oxidation method. Next, a plurality of word lines 106 and a top cap layer 108 on top of the word lines 106 are formed on the gate oxide layer 104 .

[0034] Wherein, the method of forming the word line 106 and the cap layer 108 is, for example, to firstly form a conductive layer (not shown) on the gate oxide layer 104 comprehensively, and then form a material layer (not shown) on the conductive layer, The conductive layer and the material layer are then patterned in a direction perpendicular to the buried bit line to form the word line 106 and the cap layer 108 . It should be noted that th...

no. 2 example

[0044] 4A to 4D are schematic cross-sectional flow diagrams of the code implantation process of the mask-mode ROM device according to another preferred embodiment of the present invention.

[0045] Referring to FIG. 4A , firstly, a plurality of buried bit lines 102 are formed in a substrate 100 . Next, a gate oxide layer 104 is formed on the surface of the substrate 100 by using a thermal oxidation method. Next, a plurality of word lines 106 and a top cap layer 108 on top of the word lines 106 are formed on the gate oxide layer 104 , and a termination layer 107 is formed between the word lines 106 and the top cap layer 108 .

[0046] Wherein, the method for forming the word line 106, the stop layer and the top cover layer 108 is, for example, to firstly form a conductive layer (not shown) on the gate oxide layer 104 comprehensively, and then form an etching stop layer (not shown) on the conductive layer. shown), and a material layer (not shown) is formed on the etch stop laye...

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Abstract

A code implanting process wherein a grid oxidation layer and a plurality of character threads are formed on a substrate, a dielectric layer is formed on the top of the substrate where no character thread and roof board layer is formed, then a photoresistive layer having a thread / pitch pattern is formed on the dielectric layer and the roof board layer, and the roof board layer exposed by the photoresistive layer is removed. Later, an ion implantation process is introduced to implant an ion in a predictive encoding channel.

Description

technical field [0001] The present invention relates to a code implantation process (Code Implantation), and in particular to a self-alignment code implantation process of a mask-mode ROM. Background technique [0002] The structure of a general mask ROM includes several bit lines (Bit Line, BL) and several polysilicon word lines (Word Line, WL) across the bit lines. The area below the word line and between two adjacent bit lines is the channel area of ​​the memory cell. For some mask-mode ROMs, the programming method is to store data “0” or “1” by whether or not ions are implanted in the channel. This process of implanting ions into a specific channel region is also called a code implantation process. [0003] Generally, the code implantation process of the masked ROM is to firstly use a photomask to pattern the photoresist layer formed on the substrate to expose the channel region to be coded. Then, an ion implantation process is performed on the patterned photoresist l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8246H10B20/00
Inventor 张庆裕
Owner MACRONIX INT CO LTD