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Semiconductor laser device and mfg. method thereof

A laser, semiconductor technology, used in semiconductor lasers, lasers, laser parts and other directions

Inactive Publication Date: 2002-12-04
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] Although the problems of the prior art have been described by way of an example of a nitride-based semiconductor laser, a long-wavelength ridge-peak waveguide type semiconductor laser that has a longer oscillation wavelength than a nitride-based semiconductor laser, for example, a GaAs or InP-based ridge-peak waveguide type semiconductor laser also have the same problem

Method used

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  • Semiconductor laser device and mfg. method thereof
  • Semiconductor laser device and mfg. method thereof
  • Semiconductor laser device and mfg. method thereof

Examples

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Embodiment 1

[0044] In this embodiment, the semiconductor laser of the present invention provides a nitride III-V compound-based semiconductor laser (hereinafter, referred to as "nitride-based semiconductor laser"). figure 1 A structure based on a nitride semiconductor laser according to this embodiment is shown.

[0045] refer to figure 1 , the nitride-based semiconductor laser 40 according to the present embodiment has a stacked structure in which multiple layers are stacked on a sapphire substrate 42 via a GaN buffer layer (not shown). The multilayer stacked on the sapphire substrate 42 is n-Al with a thickness of 5 μm 0.05 Ga 0.95 N contact layer 44, n-(GaN:Si / Al 0.1 Ga 0.9 N)-SLS cladding layer 46, n-GaN optical waveguide layer 48 with a thickness of 0.15 μm, GaInN.MQW active layer 50 with three well layers each with a thickness of 4 nm and four barrier layers each with a thickness of 10 nm , p-Al with a thickness of 0.01 μm 0.35 Ga 0.65 N degradation prevention layer 52, p-G...

example 1

[0064] When the thickness T of the remaining layer portion 56a of the p-cladding layer 56 is set to 0.15 μm and the ridge width W is set to 1.6 μm, p-(GaN:Mg / Al y Ga 1-y When the Al composition y of the N)-SLS cladding layer 56 is set to 0.1, the effective refractive index difference Δn becomes 0.0063. Therefore, as indicated by the letter Al in Figure 2, the half-value width θ para becomes 8.7° and the knee level becomes 70mW.

[0065] In Example 1 of the present invention, the laser can meet the knee level of 60mW or more and the half-value width θ para 7.5° or greater is required.

Embodiment 2

[0070] In this embodiment, the semiconductor laser of the present invention provides a nitride-based semiconductor laser different from Embodiment 1. image 3 A cross-sectional view showing a structure based on a nitride semiconductor laser according to the present embodiment.

[0071] refer to image 3 , the nitride-based semiconductor laser 70 according to this embodiment has a stacked structure in which multiple layers are stacked on a sapphire substrate 72 via a GaN buffer layer (not shown). The multilayer stacked on the sapphire substrate 72 is an n-GaN contact layer 74 with a thickness of 5 μm, an n-Al x Ga 1-x N-cladding layer 76, n-GaN optical waveguide layer 78 with a thickness of 0.10 μm, three well layers each having a thickness of 3.5 nm, and a GaInN·MQW active layer 80 each having four barrier layers of 70 nm, with a thickness of 0.01μm p-Al 0.18 Ga 0.82 N degradation preventing layer 82, p-GaN optical waveguide layer 84 with a thickness of 0.10 μm, p-(GaN:Mg...

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Abstract

A method of manufacturing a ridge-peak waveguide type semiconductor laser having a large half-value width and a high knee level is provided. First, the effective refractive index difference Δn between the effective refractive index neff1 of the oscillation wavelength of the ridge and the effective refractive index neff2 of the oscillation wavelength of the part on each of both sides of the ridge is expressed as Δn=neff1−neff2, the ridge width Expressed as W. Under this assumption, the constants "a", "b", "c" and "d" of the following three relational expressions are set on the X-Y coordinates (X axis: W, Y axis: Δn). The first relationship is expressed as Δn a×W+b, where "a" and "b" are constants that determine the knee point level. The second relational expression is expressed as W≥c, where "c" is a constant determined by the minimum ridge width at the time of ridge formation. The third relation is expressed as Δn≥d, where "d" is a constant determined by the desired half-width value θpara. Therefore, at least one of the following, i.e., the kind and thickness of the insulating film, the thickness of the electrode film on the insulating film, the ridge height, and the thickness of the remaining layer portion of the upper cladding on each side of the ridge.

Description

technical field [0001] The present invention relates to a ridge-wave guide semiconductor laser, in particular to a semiconductor laser having a far-field pattern (FFP) with a large half-width value (half-field pattern) in a direction parallel to the heterojunction interface. width value)θ para It is a ridge-peak waveguide type semiconductor laser with required laser characteristics when working at high power. Background technique [0002] Among semiconductor lasers, including long-wave GaAs or InP-based semiconductor lasers and short-wave nitride III-V compound semiconductor lasers, ridge-peak waveguide semiconductor lasers have been widely used due to their ease of manufacture. [0003] The ridge-peak waveguide type semiconductor laser is an index guided type structure such that the upper part of the upper cladding layer and the contact layer are formed as stripe-shaped ridges, and the two sides of the ridge of the upper cladding layer are The sides and portions on both s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/223H01S5/042H01S5/22H01S5/323H01S5/343
CPCH01S5/22H01S5/2213H01S5/32341H01S2301/176H01S2301/18H01S5/04254H01S5/04257
Inventor 内田史朗东条刚
Owner SONY CORP