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Cathode reduction process for treating surface of porous silicon

A technology of surface treatment and porous silicon, applied in post-processing, post-processing details, chemical instruments and methods, etc., can solve problems such as unsuitable for industrial production, difficult control accuracy, complex equipment, etc., to achieve convenient operation, easy precision control, The effect of simple equipment

Inactive Publication Date: 2003-02-12
EAST CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The disadvantages of the background technology are that the equipment is complicated, the operation is cumbersome, the control accuracy is difficult, and the output is low. It is suitable for scientific research and not suitable for industrial production.

Method used

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  • Cathode reduction process for treating surface of porous silicon
  • Cathode reduction process for treating surface of porous silicon
  • Cathode reduction process for treating surface of porous silicon

Examples

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Comparison scheme
Effect test

Embodiment 1

[0023] Cathodic reduction surface treatment technology of embodiment 1 porous silicon

[0024] Cathodic reduction surface treatment process of porous silicon:

[0025] Current density of reverse current: 1.2mAcm -2

[0026] Reverse feed time: 50min

[0027] Porous silicon drying process: cleaning time: 10min

[0028] Drying method: one of four drying methods

[0029] The porous silicon prepared in this embodiment has no hair-like substances, and its surface is smooth and bright as a mirror, and can be stored in the air for a long time. Stored for more than 30 days, there is no tendency to deteriorate. I have done gold plating, photolithography, and made partial porous silicon, and the results are very satisfactory.

Embodiment 2

[0030] Cathodic reduction surface treatment technology of embodiment 2 porous silicon

[0031] Cathodic reduction surface treatment process of porous silicon:

[0032] Current density of reverse current: 2mAcm -2

[0033] Reverse feed time: 30min

[0034] Porous silicon drying process: cleaning time: 15min

[0035] Drying method: one of four drying methods

[0036] The porous silicon prepared in this embodiment has no hair-like substances, and its surface is smooth and bright as a mirror, and can be stored in the air for a long time. Stored for more than 30 days, there is no tendency to deteriorate. I have done gold plating, photolithography, and made partial porous silicon, and the results are very satisfactory.

Embodiment 3

[0037] Cathodic reduction surface treatment technology of embodiment 3 porous silicon

[0038] Cathodic reduction surface treatment process of porous silicon:

[0039] Current density of reverse current: 10mAcm -2

[0040] Reverse feed time: 6min

[0041] Porous silicon drying process: cleaning time: 15min

[0042] Drying method: one of four drying methods

[0043] The porous silicon prepared in this embodiment has no hair-like substances, and its surface is smooth and bright as a mirror, and can be stored in the air for a long time. Stored for more than 30 days, there is no tendency to deteriorate. I have done gold plating, photolithography, and made partial porous silicon, and the results are very satisfactory.

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Abstract

A cathode reduction process for treating the surface of multi porous silicon includes such steps as suspending a wet P-type monosilicon wafer attached with multi porous silicon on its surface in a corroding tank, pouring a corroding liquid prepared from HF, water and absolute alcohol, applying electric current reversely for cathode reductino, washing and drying the mantioned monosilicon wafer. Its advantages are simple equipment and easy control to precision.

Description

technical field [0001] The invention relates to a cathode reduction surface treatment technology of porous silicon, which belongs to the technical field of semiconductor materials, more precisely, the manufacture of functional information materials. Background technique [0002] Porous silicon is a sea-like porous material with a pore diameter on the order of nanometers. Since Uhlir first prepared porous silicon by anodic oxidation in 1956, more and more scientific researchers have paid attention to this research, especially in the past 10 years, its application prospects in the fields of microelectronics and optoelectronics have attracted a lot of attention. It has become a hot spot of current research. [0003] The preparation of porous silicon includes the process of forming porous silicon in an etching tank and the process of drying the porous silicon. In the previous process, the P-type single crystal silicon wafer is placed on the surface filled w...

Claims

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Application Information

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IPC IPC(8): C25F3/12C30B33/08
Inventor 虞献文朱自强
Owner EAST CHINA NORMAL UNIVERSITY
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