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Method for mfg. semiconductor/magnet/semicondustor threelayer structure

A three-layer structure, semiconductor technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc.

Inactive Publication Date: 2003-03-12
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is almost no preparation of a three-layer structure of semiconductor / magnet / semiconductor.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Using GaAs single crystal as the substrate;

[0024] (2) epitaxy a thin layer of GaMnAs on GaAs by means of ion beam epitaxy;

[0025] (3) Using ion beam epitaxy to epitaxially GaAs on GaMnAs as a capping layer;

[0026] (4) According to the above growth process, a GaMnAs thin film is grown on a gallium arsenide substrate, and the Mn composition is found to be 0.8-7.4% by Auger spectrum analysis.

Embodiment 2

[0028] (1) Using Si single crystal as the substrate;

[0029] (2) Epitaxy a thin layer of MnSi on Si by means of ion beam epitaxy ～1.73 ;

[0030] (3) Using ion beam epitaxy on MnSi ～1.73 The upper epitaxial GaAs is used as the covering layer;

[0031] The intentional effect of the invention compared with the background technology: Compared with other methods for preparing magnetic semiconductor materials, the outstanding advantage of ion beam epitaxy is that it can purify ions to isotopic purity, so that other processes can be prepared under ultra-high vacuum conditions Special materials that are difficult to realize, difficult to purify, difficult to combine, and easy to oxidize.

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PUM

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Abstract

A process for preparing semiconductor / magnet / semiconductor structure includes such steps as choosing semiconductor substrate, growing magnetic material directly or after one or more buffer layer is epitaxially grown, and epitaxially growing semiconductor layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing a semiconductor / magnet / semiconductor three-layer structure. Background technique [0002] Semiconductor materials and magnetic materials are two very important materials that are indispensable in modern information technology, and semiconductor physics and magnetism are two branches of condensed matter physics. Combining magnetism and semiconductor properties to create new functional devices is a very important branch of magnetoelectronics. Therefore, combining existing magnetic materials and semiconductor materials into heterostructures or magnetizing existing semiconductor materials is very meaningful both in terms of materials practicality and fundamental physics. [0003] So far, a large number of magnet / semiconductor single heterojunction structures and magnet / semiconductor / magnet triple-layer structures have been successfully prepared, and the...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/20
Inventor 杨君玲陈诺夫何家宏钟兴儒吴金良林兰英刘志凯杨少延柴春林
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI