Integrated radio-frequency circuit

Abstract

An RF circuit (310) may be formed over a triple well (316, 318, 320) that creates two reverse biased junctions. By adjusting the bias across the junctions, the capacitance across the junctions can be reduced, reducing the capacitive coupling from the RF circuits (310) to the substrate (316), improving the self-resonance frequency of inductors and reducing the coupling of unwanted signals and noise from the underlying substrate to the active circuits and passive components such as the capacitors and inductors. As a result, radio frequency devices, such as radios, cellular telephones and transceivers such as Bluetooth transceivers, logic devices and Flash and SRAM memory devices may all be formed in the same integrated circuit die using CMOS fabrication processes.

Description

technical field [0001] The present invention relates generally to radio frequency (RF) integrated circuits including active devices and passive components such as inductors and personal digital assistant). Background technique [0002] By convention, integrated circuits are divided into different categories in the integrated circuit manufacturing process depending on the compatibility of the process and other considerations. Generally speaking, RF circuits should not be mixed with logic circuits in the same integrated circuit. Radio frequency circuits are analog circuits involved in the filtering and detection of radio frequency signals, such as cellular telephone signals. In contrast, logic circuits generally contain transistors and other active elements that make up integrated circuit devices. For example, bipolar technology can be used to make radio-frequency circuits, while standard complementary metal-oxide-semiconductor (CMOS) processes can be used to make logic cir...

AI Technical Summary

Problems solved by technology

Logic circuits can generate noise that can adversely affect the operation of on-chip RF components du

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