Auxiliary designing method of contact hole photoetching

An auxiliary design and lithography technology, which is applied in the fields of opto-mechanical equipment, optics, and photo-engraving process of pattern surface, etc. It can solve the problem of shallow depth of focus, and achieve the effect of increasing the depth of focus and correcting the optical proximity effect.

Inactive Publication Date: 2003-04-16
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, as the resolution of exposure lithography enters the sub-micron manufacturing process, the higher the resolution, the shallower the depth of focus will be.

Method used

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  • Auxiliary designing method of contact hole photoetching
  • Auxiliary designing method of contact hole photoetching
  • Auxiliary designing method of contact hole photoetching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Figure 2B to Figure 2D It is a graph showing the size and focal length of the contact holes of different chain types after exposure via the 2 / 3 ring filter of the off-axis illumination system. Figure 2B The photomask has multiple hole patterns, and the multiple hole patterns are connected by a line pattern with a line width of 200 nm. Figure 2C The photomask has multiple hole patterns, and the multiple hole patterns are connected by a line pattern with a line width of 240 nm. Figure 2D The photomask has multiple hole patterns, and the multiple hole patterns are connected by a line pattern with a line width of 280 nm.

[0028] reference Figure 2B to Figure 2D As the line width of the line pattern connecting multiple contact holes in series increases, the focal depth of the contact holes formed by the exposure machine also increases. In the first embodiment, because the line width of the line pattern connecting multiple contact holes in series is increased, the pattern ...

Embodiment 2

[0029] Figure 2E to Figure 2G It is a graph showing the size and focal length of the contact holes of different chain types after exposure via the on-axis sector filter of the off-axis illumination system. Figure 2E The photomask has multiple hole patterns, and the multiple hole patterns are connected by a line pattern with a line width of 200 nm. Figure 2F The photomask has multiple hole patterns, and the multiple hole patterns are connected by a line pattern with a line width of 240 nm. Figure 2G The photomask has multiple hole patterns, and the multiple hole patterns are connected by a line pattern with a line width of 280 nm.

[0030] reference Figure 2E to Figure 2G As the line width of the line pattern connecting multiple contact holes in series increases, the focal depth of the contact holes formed by the exposure machine also increases. In the second embodiment, because the line width of the line pattern connecting the plurality of contact holes in series is increase...

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Abstract

An assistant design method for contact holes photoetching includes the following steps: determining exposing wavelength of an exposure light source, determining the smallest dephasing line width by interference degree of the exposure, process technology integral parameter and numerical diaphragm, recovering the above mentioned smallest dephasing line width into the smallest line width on light mask in reduced proportion and using linear pattern smaller than the smallest line width to connect multiple contact holes.

Description

Technical field [0001] The invention relates to an auxiliary design method for contact hole photolithography; in particular, it relates to the use of this auxiliary design method to form a contact hole with a better focal depth. Background technique [0002] In a general semiconductor manufacturing process, a hole pattern is used to form a contact hole (contact / hole C / H) on a semiconductor layer through exposure and development. [0003] Figure 1A It is a brief schematic diagram showing the contact hole when exposed by the 2 / 3 ring filter of the off-axis illumination system; Figure 1B It is a schematic diagram showing the size and focal length of the contact hole after exposure through the 2 / 3 ring filter of the off-axis illumination system. Compare Figure 1A versus Figure 1B When the size of the contact hole is about 105nm±10nm, the focal depth of the contact hole is about 0.2μm. [0004] However, as the resolution of exposure lithography enters the s...

Claims

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Application Information

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IPC IPC(8): G03F7/00H01L21/00H01L21/027H01L21/30
Inventor 吴元薰
Owner NAN YA TECH
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