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MOS transistor structure for eliminating leakage current and CMOS image transistor

A MOS tube and leakage current technology, which is applied in the direction of circuits, electrical components, and electric solid-state devices, can solve problems such as leakage current, increase in dark current of CMOS image tubes, defects at the junction of source and gate oxide films, etc., and achieve improved The effect of product pass rate and quality

Inactive Publication Date: 2003-09-03
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the current manufacturing methods of CMOS image tubes in the industry, especially when making electrical connections with photodiodes, resetting the source of the transistors is easily affected by the gate / gate oxide film and spacer etch-back manufacturing methods, and The phenomenon that the junction between the source and the gate oxide film produces defects and leakage current occurs
As a result, the dark current (dark current) of the CMOS image tube increases, the noise increases, and the white pixel (white pixel) occurs

Method used

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  • MOS transistor structure for eliminating leakage current and CMOS image transistor
  • MOS transistor structure for eliminating leakage current and CMOS image transistor
  • MOS transistor structure for eliminating leakage current and CMOS image transistor

Examples

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no. 1 example

[0032] See figure 2 The cross-sectional schematic diagram of the MOS tube structure, the MOS tube structure that can avoid the leakage current provided by the present invention includes the following components: first, a semiconductor substrate 200 such as a P-type substrate or a P-type junction, the partially described substrate There is a first field oxide film 210 and a second field oxide film 220 on the bottom 200 . Next, a gate oxide film 230, such as silicon dioxide, is located on the part of the substrate 200 between the field oxide films 210 and 220, and one side of the gate oxide film 230 is connected to The first field oxide film 210 is in contact with each other.

[0033] still see figure 2 , a gate 240 such as polysilicon is located above the gate oxide film 230 and extends to part of the first field oxide film 210 . Then, a first source / drain (S / D1) is located under the first field oxide film 210 and extends to part of the gate oxide film 230 . And a second ...

no. 2 example

[0038] See image 3 , a schematic cross-sectional view of a CMOS image tube structure. The CMOS image tube provided by the present invention has a photodiode (photodiode, PD) and a MOS tube structure, and at least includes the following components. Firstly, a semiconductor substrate 300 such as a P-type substrate or a P-type junction, part of which has a first field oxide film 310 and a second field oxide film 320 on the substrate 300 . Then, a photodiode PD is located at a predetermined position below the surface of the part of the substrate 300, and it is characterized in that the first field oxide film 310 is included on the top or part of the photodiode PD, and is located The first field oxide film 310 above the photodiode PD also has the effect of reducing the leakage of the interface of the photodiode PD.

[0039] Then, still see image 3 , a gate oxide film 330 such as silicon dioxide, located on the part of the substrate 300 between the field oxide films 310 and 320, a...

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Abstract

This invention provides a structure of a MOS transistor capable of avoiding of leakage current and a CMOS imaging transistor having this structure. The object of the inventino is to improve the structure of the MOS transistor, making the source electrode of the MOS transistor not generate junction leakage due to this influence of the forming process for gate electrode. Said structure is mainly characterized in that the source electrode is buried below the field oxide film, said source electrode contacts with a part of the gate oxide film in one side and contacts with a photosensitive diode in the other side.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular to a metal oxide semiconductor field effect transistor (or called insulated gate field effect transistor, MOS-FET, or MOS tube, which can avoid leakage current, which is called "metal oxide semiconductor" in Taiwan. ) structure and a CMOS image sensor with this structure, especially for improving the structure of the MOS tube, so that the source of the MOS tube is not easily affected by the gate manufacturing method and generates leakage at the junction (Junction Leakage). Background technique [0002] As far as photosensitive diodes are concerned, the intensity of incident light is converted into photocurrent mainly by using the PN junction in semiconductors (such as silicon). Basically, a plurality of photodiodes are arranged into a photodiode array, which can be used as an image tube, such as a MOS image tube. [0003] In the current manufacturing methods of CMOS image tubes in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/14H01L29/78
Inventor 詹前陵
Owner TAIWAN SEMICON MFG CO LTD