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Method for manufacturing semiconductor device suitable for image sensor

An image sensor and semiconductor technology, applied in semiconductor devices, radiation control devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of low yield of semiconductor devices, difficulty in minimization, and irregular thickness of oxide layer 16, etc.

Inactive Publication Date: 2003-10-01
DONGBUANAM SEMICON
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Problems solved by technology

But at such relatively low temperatures, the thickness of the oxide layer 16 tends to become irregular and it is difficult to minimize the number of particles generated during the formation of the oxide layer 16
These disadvantages result in low yields of traditional methods of fabricating semiconductor devices suitable for image sensors

Method used

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  • Method for manufacturing semiconductor device suitable for image sensor
  • Method for manufacturing semiconductor device suitable for image sensor
  • Method for manufacturing semiconductor device suitable for image sensor

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Embodiment Construction

[0020] The following will refer to Figures 2A to 2H A method of manufacturing a semiconductor device suitable for an image sensor according to a preferred embodiment of the present invention will be described in detail. The same reference numerals denote the same parts in the figures.

[0021] In this preferred embodiment of the present invention, after the bonding area is exposed, a protective layer is formed to protect the bonding area, and then color filter elements, planar layers, and microlenses are sequentially formed on the protective layer. Therefore, the microlenses and color filter elements will not be affected during the process of forming the protective layer, so that a high yield of production can be achieved.

[0022] exist Figure 2A In this method, a lower insulating layer 104 is formed on the substrate 102 by deposition. The substrate 102 has a photoelectric conversion element (not shown) such as a charge-coupled device (CCD) or a photodiode, and logic circ...

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Abstract

In a method of manufacturing a semiconductor device suitable for an image sensor, a bonding region is formed on the lower insulating layer after forming a lower insulating layer on a substrate. Then, an upper insulating layer is formed on the substrate to cover the bonding area. The upper insulating layer is selectively removed to expose a top portion of the bonding region. Subsequently, a protective layer is formed on the substrate. After forming several color filter elements on the protection layer, a planar layer is formed to cover the color filter elements. Finally, several microlenses are formed on the plane layer.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device suitable for an image sensor having a microlens. Background technique [0002] Recently, most communication equipment is required to process not only sound signals but also image signals, for which color image sensors are generally used. [0003] A color image sensor typically includes many pixels, each pixel having a die, color filter elements and microlenses. The metal mold has a cell electrode and a bonding area. A color filter element is formed on the dielectric layer covering the unit electrodes. The microlens is located on the color filter element and serves to focus the incident light on the color filter element. [0004] Since semiconductor devices suitable for image sensors are generally priced high, their production yields have heretofore been neglected to some extent. However, the r...

Claims

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Application Information

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IPC IPC(8): G02B5/20G02B3/00H01L27/14H01L27/146H01L27/148H04N5/335H04N5/369
CPCH01L27/14601H01L27/14685H01L27/148
Inventor 金载甲
Owner DONGBUANAM SEMICON
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