Differentially-pumped material processing system
An implanted and differentiated technology, applied in ion implantation plating, metal material coating process, instruments, etc., can solve the problem of target distance limitation
Inactive Publication Date: 2003-10-15
尤纳克西斯美国公司
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However, the size of the target and the distance from the target to the substrate are practically limited
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[0033] Many devices require highly uniform film coverage. For example, optical filters used in some applications such as optical fiber communication systems may require multiple layers of highly uniform films, where each layer has a precise thickness. Now, optical fiber communication systems are widely adopted. Recently, new communication services such as the Internet, high-speed data links, video services, and wireless services, etc. have led to a tremendous increase in the demand for bandwidth. At present, the data transmission volume is increasing at an annual rate of 80%, and the voice transmission volume is increasing at an annual rate of 10%.
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A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin film.
Description
[0001] Related application [0002] This application claims the priority of provisional patent application No. 60 / 266,114 filed on February 2, 2001, the entire disclosure of which is incorporated herein by reference. This application is also related to Patent Application No. 60 / 217,049 filed on July 10, 2000, the entire disclosure of which is incorporated herein by reference. Technical field [0003] The present invention broadly relates to thin film deposition and etching systems. In particular, it relates to a method and apparatus for depositing thin films with very high uniformity. The invention also relates to a method and apparatus for etching materials at a uniform etching rate. Background technique [0004] There are three common techniques for depositing thin films on a substrate. These techniques are evaporation, ion beam deposition, and magnetron sputtering. figure 1 A schematic block diagram of the prior art electron beam evaporation deposition system 10 is described. ...
Claims
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IPC IPC(8): G02B5/28C23C14/04C23C14/22C23C14/46
CPCC23C14/46C23C14/228C23C14/044
Inventor 皮埃罗·斯弗拉佐
Owner 尤纳克西斯美国公司