Mfg method with regular embedded structure outline

Abstract

A process method for a regular mosaic structure profile includes: providing a basic material with a single inlay structure having a protecting layer orderly formed above basic material, a dielectric layer and a window hole penetrating the said dielectric layer and protection layer, and a wet etching program on the basic material utilizing deionized water, HCI and hydrofluoric acid etching solution making the etching option ratio between layers to be 1:1.

Description

(1) Technical field [0001] The present invention relates to an interconnect structure, and more particularly to a damascene structure with improved profile. (2) Background technology [0002] For semiconductor processes below 0.25 micron critical dimension, it is necessary to use a so-called damascene technique to fabricate interconnections due to the difficulty in fabricating interconnections using traditional aluminum metal deposition and etching processes. In addition, considering the performance of semiconductor devices below this critical dimension, metals with lower resistance values, such as copper metals, are often used. Low-resistance metals cannot be etched for interconnect patterns by reactive ion etching. Therefore, the use of copper as the interconnection increases the demand for the damascene process. [0003] In addition to using low-resistance metals such as copper, copper conductors are also combined with low-k dielectric layers (k value less than 4) to im...

AI Technical Summary

Problems solved by technology

Therefore, the dual damascene process faces the same issues as the single damascene process

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