Method for preparing p-type zinc oxide film

A zinc oxide thin film, p-type technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid device manufacturing, etc., can solve the problems that affect the application of zinc oxide, the inability to form a homogeneous pn junction, etc., and achieve concentration control Convenience, good operability and simple principle

Inactive Publication Date: 2003-12-10
ZHEJIANG UNIV
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Problems solved by technology

However, the p-type doping technology of zinc oxide has not been well solved, and the homogeneous pn junction cannot be formed, which affects the application of zinc oxide in optoelectronic devices.

Method used

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Examples

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Comparison scheme
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Embodiment Construction

[0012] Below in conjunction with example further illustrate the present invention.

[0013] The preparation of p-type zinc oxide film comprises the following steps:

[0014] Using metal zinc as the sputtering target and quartz glass as the substrate, firstly clean the substrate according to the conventional method to remove the grease and dirt on the surface, then put the substrate into the magnetron sputtering chamber, and evacuate to 10 -3 Pa, heating the substrate, keeping the substrate temperature at 100°C, feeding the working gas argon and the reaction gas nitrogen, wherein the flow rate of the argon gas is 28 sccm, and the flow rate of the nitrogen gas is 3 sccm. Turn on the magnetron sputtering power supply for magnetron sputtering coating, the vacuum chamber pressure is 5×10 -1 Pa, the deposition time is 1 hour, and the zinc nitride film is obtained. The obtained zinc nitride thin film was taken out from the vacuum chamber, and thermally oxidized in air at 450° C. fo...

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Abstract

The method for preparing p-type zinc oxide film by using magnetron sputtering process is characterized by that it uses metal zinc as target for magnetron sputtering, and introduces nitrogen gas or nitrogen gas and oxygen gas into working gas argon gas as reactant gas, makes the pressure of magnetron sputtering vacuum chamber be 10(-1)Pa-10(o)Pa, the ratio of nitrogen flow and argon flow be in the range of 1:10-1:1, and the ratio of oxygen flow anjd argon flow be in the range of 0:1-1:1, then makes the obtained nitrogen-oxygen-zinc film undergo the process of heat treatment in atmosphere or oxygen atmosphere, its heat treatment temp. is 300-500 deg.c and treatment time is 0.5-5 hr. so as to obtain the invented product.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor thin film. Specifically, it is about the preparation method of p-type zinc oxide thin film. Background technique [0002] Zinc oxide is a promising optoelectronic material in the blue-violet band, and has potential application prospects in optoelectronic devices. However, the p-type doping technology of zinc oxide has not been well solved, and the homogeneous pn junction cannot be formed, which affects the application of zinc oxide in optoelectronic devices. Contents of the invention [0003] The object of the present invention is to provide a method for preparing p-type zinc oxide thin film. [0004] In the method of the invention, in the process of magnetron sputtering, nitrogen gas or nitrogen gas and oxygen gas are additionally introduced into the working gas argon as reaction gas to obtain p-type zinc oxide film, and the target...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35H01L21/203H01L31/18
CPCY02P70/50
Inventor 季振国王超刘坤叶志镇
Owner ZHEJIANG UNIV
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