Method and special equipment for preparing granular silicon belt

A technology of granular silicon and particle diameter, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of high preparation cost, high substrate cost, and the inability to reduce the production cost of polycrystalline silicon thin film batteries, etc., to achieve production Low cost, simple process, no effect of radiation pollution

Inactive Publication Date: 2004-01-21
SUN YAT SEN UNIV
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Problems solved by technology

At present, the substrate material is generally made by preparing bulk polysilicon material, and then cutting it into sheet materials. In addition to the high preparation cost of bulk polysilicon, cutting it into sheets will cause considerable losses. An important reason for the high cost and the inability to reduce the production cost of polysilicon thin film cells

Method used

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  • Method and special equipment for preparing granular silicon belt
  • Method and special equipment for preparing granular silicon belt
  • Method and special equipment for preparing granular silicon belt

Examples

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Embodiment

[0026] This embodiment adopts as figure 1 The preparation device for the granular silicon tape is shown. In this device, 1 is a transmission support plate (made of quartz material), and 2 is a mechanical transmission device, through which the transmission support plate 1 can be driven to move forward continuously in the horizontal direction, in the order of front and back on the transmission path of the transmission plate The feeding funnel 3, the preheating zone 4, the line focus heating zone 5 and the natural cooling zone 6 are arranged in sequence; in the preheating zone, there are two rows of 8 non-focusing tungsten halogen lamps 41, 42 respectively arranged on the upper and lower sides of the transmission plate. . The reflector 50 adopts a double oval reflector lampshade. There are four halogen tungsten lamps 51, 52, 53, and 54 respectively arranged at the focus positions of the double oval reflector lampshade 50, and there are four halogen tungsten lamps for auxiliary h...

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Abstract

The present invention is the method and special equipment for preparing granular silicon belt capable of being used as the substrate material of polysilicon film solar cell. The technological process includes making silicon powder spread on quartz plate or graphite plate pass through preheating area, linear focusing heating area and natural cooling area successively. The linear focusing heatingarea is one optical heating area comprising two halogen tungsten lamp assemblies with optical linear focusing reflector on the upper and the lower sides separately. In the linear focusing heating area silicon powder layer is zone molten and the molten silicon solution flows into the gaps between silicon powder grains to form so-called granular silicon belt after being cooled. The granular silicon belt has molten crystallized surface with certain mechanical strength and chemical stability and low cost and is suitable for use as the substrate material of solar cell.

Description

technical field [0001] The invention relates to a method for preparing granular silicon strips that can be used as substrate materials for polycrystalline silicon thin-film solar cells and special equipment for preparing granular silicon strips using the method. Background technique [0002] The development of silicon-based solar cells has been facing the main problems, one is to improve the photoelectric conversion efficiency; the other is to reduce production costs. Judging from the current development status, fused-cast polycrystalline silicon solar cells have reduced production costs to a certain extent, but there is a large amount of slicing loss just like monocrystalline silicon cells, and it is difficult to greatly reduce production costs; Obvious advantages, but the light fatigue effect seriously restricts its development space. Studies have shown that the photoelectric conversion efficiency of polycrystalline silicon thin film cells can approach that of monocrystal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 沈辉梁宗存班群王晓晶徐彐青
Owner SUN YAT SEN UNIV
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