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Method for preparing high-temperature superconducting material intrinsic junction

A superconducting material, high temperature technology, applied in the use of superconducting elements, the manufacture/processing of superconducting devices, and devices containing a junction of different materials, etc., can solve the problem of low repeatability, etc., to achieve the effect of precise control

Inactive Publication Date: 2004-01-28
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are also some reports on the preparation of intrinsic junctions containing a few knots, but the reproducibility is not high, and the best results only achieve reliable preparation of 4 to 5 knots [A.Yurgens, D.Winkler, N.V.Zavaritsky and T.Claeson, Phys. Rev. B53 (1996), R8887]

Method used

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  • Method for preparing high-temperature superconducting material intrinsic junction
  • Method for preparing high-temperature superconducting material intrinsic junction
  • Method for preparing high-temperature superconducting material intrinsic junction

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0021] 1. Using Bi 2 Sr 2 CaCu 2 o 8+x (BSCCO) is a high-temperature superconducting material, the thickness of a single intrinsic junction is 1.54 nanometers, the metal layer material is silver, and the insulating layer material is calcium fluoride.

[0022] ion energy

beam density

ER Bi

ER Ag

ER Au

high energy etching

1000eV

0.76mA / cm 2

18nm / min

76nm / min

54nm / min

low energy etch

250eV

0.38mA / cm 2

1.3nm / min

9.3nm / min

6.3nm / min

[0023] ER Bi 、ER Ag and ER Au represent the etch rates of BSCCO, silver and gold, respectively

[0024] The present invention designs and constructs an intrinsic junction containing three junctions. In the experiment, the thickness of the first silver film was 56 nanometers, and the first ion etching time was 12 minutes. The number of junctions in the obtained mesa structure was 7, one more than the expected result. In order to obtain an intrinsic...

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PUM

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Abstract

The invented method includes following steps. (1) Manual peeling, (2) metal layer protection, (3) fixation, (4) photo etching graphics, (5) ion etching, (6) insulation protection, (7) ultrasound cleaning, (8) structuring and connecting electrode. In step (5), ion etching with low energy is adopted. In step (8), two top electrodes are structured on mesa structure. The advantages of the invention are as follows. Through fine controlling parameters such as thickness of metal level and etching time etc. the invention realizes primary controlling number of intrinsic junction. The fine controlling number of junction is realized by second time of ion etching and added etching. The invention is suitable to control of number of intrinsic junction for a variety of high temperature super conducting material.

Description

1. Technical field [0001] The invention relates to a high-temperature superconducting material, in particular to a method for preparing the intrinsic junction of the high-temperature superconducting material. 2. Background technology [0002] Since the discovery of high-temperature superconducting materials, they have been extensively studied and paid attention to in the field of materials and devices. High-temperature superconducting materials have strong anisotropy, and have a natural layered structure of Josephson coupling along the c-axis direction. Using this layered structure, an intrinsic Josephson junction can be formed, called an intrinsic junction for short. Intrinsic junction is a very important topic in the research of high temperature superconducting junction, it has many potential application values ​​such as high frequency, high power oscillation source, high frequency signal detection and voltage reference. Thanks Bi 2 Sr 2 CaCu 2 o 8+x (BSCCO) single cr...

Claims

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Application Information

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IPC IPC(8): C04B35/00H01B12/00H01L39/22H01L39/24
CPCY02E40/64Y02E40/60
Inventor 尤立星吴培亨许伟伟康琳
Owner NANJING UNIV
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