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Semiconductor laser device and manufacturing method therefor

A technology for semiconductors and lasers, applied in the field of semiconductor laser equipment and its manufacturing, capable of solving problems such as unfavorable exposure of the p-type second cladding layer 7

Inactive Publication Date: 2004-06-02
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the above case, there is a problem that the side surfaces of the p-type GaAs contact layer 8 and the p-type second cladding layer 7 constituting the raised portion 10 are not covered with the n-type GaAs current constriction layer 21, and, similarly to FIG. 5B In the case of , the p-type second cladding layer 7 is disadvantageously exposed
Although not shown, similar problems exist in the raised portion 20 of the semiconductor laser 18, the p-type second cladding layer 16, and the p-type GaAs contact layer 17.

Method used

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  • Semiconductor laser device and manufacturing method therefor
  • Semiconductor laser device and manufacturing method therefor
  • Semiconductor laser device and manufacturing method therefor

Examples

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no. 1 example

[0058] Figure 1A , 1B and 1C to 1J are cross-sectional views of the semiconductor laser device of the present first embodiment in the process of manufacture. will refer to Figure 1A , 1B and 1C~1J to describe the manufacturing method of the present semiconductor laser device.

[0059] First, if Figure 1A As shown, n-type GaAs buffer layer 32, n-type AlGaAs first cladding layer 33, AlGaAs first guide layer 34, multi-quantum well active layer 35, AlGaAs second guide layer 36, p-type AlGaAs second cladding layer A layer 37 and a p-type GaAs contact layer (coated with zinc) 38 are successively grown on an n-type GaAs substrate 31 by MOCVD (Metal Organic Chemical Vapor Deposition), thereby forming an AlGaAs-based semiconductor laser 39 as an example of a semiconductor laser. . In this way, the first crystal growth is achieved.

[0060] Next, if Figure 1B As shown, a partial region of the AlGaAs-based semiconductor laser 39 is removed by etching. Next, as shown in Figur...

no. 2 example

[0079] This second embodiment relates to the case where a raised edge is formed on a p-type GaAs contact layer constituting a raised portion of a semiconductor laser. 2A, 2B, 2C and 2D show cross sections of the semiconductor laser device of this second embodiment in the process of manufacture. A method of manufacturing the present semiconductor laser device will be described with reference to FIGS. 2A , 2B, 2C, and 2D.

[0080] First, similar to the first embodiment Figure 1A~1E , by performing crystal growth twice on a single n-type GaAs substrate 61, an AlGaAs-based semiconductor laser 64 and an AlGaInP-based semiconductor laser 67 are formed; and, raised portions 68 and 69 are formed on the semiconductor lasers 64 and 67. In the above case, if there is an etching ratio difference between the p-type second cladding layer 62, 65 of the semiconductor laser 64, 67 and the p-type GaAs contact layer 63, 66, the protruding edge is made into a raised portion 68 and 69 on the p-...

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Abstract

A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 mum (about 0.5 mum) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.

Description

Background of the invention [0001] The invention relates to a semiconductor laser device and a manufacturing method thereof; in the device, a plurality of semiconductor lasers are fabricated on a semiconductor substrate. [0002] In recent years, optical disks have been popularized, and their recording formats have undergone many changes. When optically reading optical discs of different standards, semiconductor lasers of different standards are required. For example, to read two types of optical discs, CD (Compact Disc Read Only) and DVD (Digital Versatile Disc), an infrared laser emitting at a wavelength of about 780 nm and a red laser emitting at a wavelength of about 650 nm are required. [0003] In the above circumstances, a semiconductor laser device capable of emitting laser light of two wavelengths in one package is required for downsizing and reducing the cost of the pickup. [0004] Furthermore, semiconductor laser devices are required to be capable of emitting two...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/22H01S5/00H01S5/02H01S5/223H01S5/40
CPCH01S5/222H01S2302/00H01S5/0655H01S5/4087H01S5/4031H01S5/2231
Inventor 上田祯亮宫嵜启介和田一彦辰巳正毅森本泰司
Owner SHARP KK