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Method of manufacture semiconductor device

A technology of semiconductors and conductors, which is applied in the field of manufacturing semiconductor devices and can solve problems such as degradation

Inactive Publication Date: 2006-10-25
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Although these techniques can be implemented because they do not cause oxidation of tungsten, there is a problem that the electrical characteristics of the device are degraded by LP-CVD nitride films due to the influence of hydrogen contained in the film quality or stress
In addition, the ALD oxide film has a problem that the electrical characteristics of the device are degraded due to the influence of the catalyst used to form the ALD oxide film, and carbon and chlorine contained in the source gas

Method used

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  • Method of manufacture semiconductor device
  • Method of manufacture semiconductor device
  • Method of manufacture semiconductor device

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Embodiment Construction

[0048] Figure 1A to Figure 1C It is a cross-sectional view for explaining the first disclosed method of manufacturing a semiconductor device. First look Figure 1A , A gate dielectric film 11 and a polysilicon film 12 are formed on the semiconductor substrate 10. A metal film such as a tungsten film 13 is formed on the polysilicon film 12.

[0049] The polysilicon film 12 and the tungsten film 13 are gate electrodes, and the gate electrode can be formed using only the tungsten film 13 without forming the polysilicon film 12. In addition, in order to prevent the formation of tungsten silicide (WSi x ), WN can be added at the interface between the polysilicon film 12 and the tungsten film 13 x , TiN or WSi x The anti-silicide film.

[0050] Then, a hard shielding film 14 is formed on the tungsten film 13. See Figure 1B , The hard shielding film 14 is patterned by photolithography and etching processes. The patterned hard shielding film 14 is used to etch the tungsten film 13, the...

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Abstract

A method of manufacturing a semiconductor device includes forming a LP-CVD oxide film on sides of a gate including a metal film by means of a LP-CVD method that does not cause oxidization of the metal film. Oxidization of a metal film can be prevented physically, and degradation of the electrical device characteristics can be prevented.

Description

Technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, which includes forming an LP-CVD oxide film configuration, which does not cause oxidation of the underlying metal film, thereby improving the physical and electrical properties of the device. Background technique [0002] As the integration level of semiconductor devices continues to increase and the line width of circuits becomes smaller, it is necessary to use materials with low resistance to form the gate to improve the speed of the device. [0003] Recently, tungsten (W) has been widely used as a gate material. Although tungsten (W) is advantageous in reducing the resistance of the gate compared to the existing tungsten silicide (WSix), tungsten also has several disadvantages. [0004] One problem is that tungsten (W) may be abnormally oxidized in a subsequent thermal process, a heat treatment process, or a deposition process including an oxide material. [0005] In parti...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/283
CPCH01L21/28061H01L21/28247H01L29/4941H01L21/18
Inventor 张民植李东浩朴恩实全光锡申承佑柳春根
Owner SK HYNIX INC