Method for forming film capacitor with less leakage current and high insulation voltage-resistance
A technology of thin film capacitors and electrodes, applied in thin film/thick film capacitors, capacitors, capacitor manufacturing, etc., can solve problems such as increasing manufacturing processes
Inactive Publication Date: 2004-06-09
ALPS ALPINE CO LTD
View PDF0 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0020] refer to Figure 1 to Figure 8 , an embodiment of the method for forming the film capacitor of the present invention will be described. Figure 1 to Figure 8 It is a cross-sectional view showing each step of a method of forming a film capacitor.
[0021] First, if figure 1 As shown, after the lower plating seed film 2 is formed on the entire surface of the substrate 1, the lower plating electrode 3 is formed on the lower plating seed film 2 in a specific range by electrolytic plating. As the substrate 1, an insulating substrate made of alumina ceramics or the like is used. In forming the lower plating seed film 2, a sputtering method or a vapor deposition method can be used. . The lower plating seed film 2 is preferably formed to have good adhesion to the substrate 1 and to be able to perform electrolytic plating on the lower plating seed film 2 , such as a double-layer structure composed of a Ti conductor film and a Cu conductor film. In this embodiment, the Ti co...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The preparation of a thin layer capacitor with a dielectric material between a lower plate (sic) electrode and an upper plate electrode, ensures low leakage current and a high breakdown voltage. The preparation of a thin layer capacitor with a dielectric material between a lower plating (sic) electrode and an upper plating electrode, which ensures low leakage current and a high breakdown voltage, involves: the formation of a lower plating electrode on a specific region of a lower plating seed layer, which is formed over the whole surface of a substrate, including the lower plating electrode; formation of photopaint layer on dielectric material, which is not coated via layer R, and by removal of the lower plating electrode under the dielectric material; uncovering of the dielectric material on the lower electrode by removal of photo-paint layer; formation of a photopaint bridge which determines the capacity of the capacitor, so that the borders cover the exposed dielectric material and the exposed substrate; formation of an upper plating film layer over the photopaint and dielectric material; and formation of an upper plating electrode on the upper plating seed layer.
Description
technical field [0001] The present invention relates to a method of forming a capacitor made of thin film. Film capacitors formed by this method are high-quality capacitors with low leakage current and high dielectric strength. Background technique [0002] In recent years, thin-film circuits in which thin-film microfabrication such as thin-film circuit elements and fine wiring are performed on substrates are widely used. When a film capacitor is provided on such a film circuit, the film capacitor is generally formed as follows. First, a lower plating electrode is formed on a substrate via a plating seed film, and the plating seed film exposed from the formed lower plating electrode is removed by milling or the like. Next, the lower plating electrode is covered with a dielectric, and a guard bridge for determining the size (capacity) of the capacitor is formed on both ends of the lower plating electrode covered with the dielectric. Then, a plating seed film is formed on t...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/33H01G4/00H01G4/005H01G4/06H01G4/12H01G13/00H05K1/16H05K3/06H05K3/10
CPCH01G4/33H05K1/162H01G4/06H01G4/005H05K3/108H05K2201/09763H05K2201/0179H05K3/064
Inventor 长濑胜美山村宪
Owner ALPS ALPINE CO LTD