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Method for forming strong dielectric membrane

A ferroelectric and alloy film technology, which is applied in the manufacture/assembly of chemical instruments and methods, circuits, piezoelectric/electrostrictive devices, etc., can solve problems such as influence, poor crystal orientation of PZT composite oxides, etc.

Inactive Publication Date: 2004-09-22
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the TiO x The crystal orientation of the film may adversely affect the crystal orientation of the PZT-based composite oxide, so it is expected to replace this technology

Method used

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  • Method for forming strong dielectric membrane
  • Method for forming strong dielectric membrane
  • Method for forming strong dielectric membrane

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Experimental program
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Effect test

Embodiment Construction

[0012] The method for forming a ferroelectric film according to this embodiment is a method for forming a ferroelectric film composed of a PZT-based composite oxide on a metal film composed of Pt by using an organometallic vapor phase growth method, which includes: starting to supply Pb raw material, the process of forming an alloy film of Pb and Pt on the above-mentioned metal film; then start to supply Ti raw material, and form an alloy film made of PbTiO on the above-mentioned alloy film. 3 The process of forming the initial crystallization nucleus of the composite oxide; and then starting the supply of Zr raw material, and forming the crystal growth layer of the PZT-based composite oxide on the upper part of the above-mentioned initial crystallization nucleus.

[0013] According to the formation method of this embodiment, first, an alloy film of Pb and Pt is formed on a metal film composed of Pt using a Pb raw material which is one of constituent elements of the PZT-based c...

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Abstract

A method of forming a ferroelectric film including a complex oxide of PZT family on a metal film formed of Pt by using a metalorganic chemical vapor deposition method. At first, supply of Pb is started to form an alloy film of Pb and Pt on the metal film. Supply of Ti is then started to form an initial crystal nuclei of PbTiO3 on the alloy film. Then, supply of Zr is started to form a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

Description

technical field [0001] The present invention relates to a method for forming a ferroelectric film using an organometallic vapor phase growth method. Background technique [0002] In recent years, in the formation technology of the ferroelectric film expected to be applied to the ferroelectric memory or the piezoelectric element, in order to improve the productivity, the organic metal vapor phase growth method (MOCVD method) has been used in the crystal growth technology of the compound semiconductor. ) film-forming technology has attracted much attention. [0003] However, when a PZT-based composite oxide is formed on a Pt metal film used as an electrode material in the conventional film-forming technology using the MOCVD method, due to the lattice matching between the PZT-based composite oxide and the Pt metal film, Therefore, it is difficult to obtain a ferroelectric film with an excellent crystal state. In addition, when the PZT-based composite oxide is formed by the MO...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C30B25/02C30B29/32H01L21/02H01L21/314H01L21/316H01L21/8246H01L27/105H01L27/115H10N30/076H10N30/093H10N30/20H10N30/853
CPCH01L27/11507H01L21/31691H01L28/55C30B29/32H01L27/11502C30B25/02C23C16/409H01L21/02197H01L21/02271H10B53/30H10B53/00
Inventor 木岛健滨田泰彰名取荣治
Owner SEIKO EPSON CORP