Unlock instant, AI-driven research and patent intelligence for your innovation.

Rectangular nitride semiconductor substrate capable of identifying outside and inside

A nitride semiconductor and rectangular technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as easy adhesion of particles

Inactive Publication Date: 2004-10-06
SUMITOMO ELECTRIC IND LTD
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the inside is rough, particles are easy to adhere to

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rectangular nitride semiconductor substrate capable of identifying outside and inside
  • Rectangular nitride semiconductor substrate capable of identifying outside and inside
  • Rectangular nitride semiconductor substrate capable of identifying outside and inside

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0069] In the present invention, the (0001) plane (C plane) is used as the surface, and the (11-20) plane (A plane) and (1-100) plane (M plane) are used as four sides of a rectangular GaN wafer. The part is provided with cutting notches that make the surface face forward and arrange the long and short cuts in a clockwise order.

[0070] Alternatively, a cut-off notch with an inclination angle of 5° to 40° is set at one corner, and whether the cut-off notch at two corners or the cut-off notch at one corner can be seen distinguishes whether it is the surface or the inside. Or change the surface removal amount g, h on the surface side and the inside side. If you can see the surface removal, you can know the inside and outside immediately.

[0071] Or write text on a GaN substrate. Writing characters on the substrate is called marking. It is possible to use a high-power laser to write text on a GaN substrate. Because the GaN substrate is transparent, it can be seen from both t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A mirror-polished obverse surface and a roughened reverse surface of the conventional GaN wafers have been discriminated by difference of roughness on the surfaces with human eyesight. The difference of the surfaces is rather ambiguous. Cracks / breaks and distortion of the wafers have been likely to occur because the roughness of the reverse surface is apt to bring fine particles. To discern an obverse from a reverse without making use of the difference of the surface roughness, the present invention provides an obverse / reverse discriminative rectangular nitride semiconductor wafer having a longer slanting edge and a shorter slanting edge at obversely-clockwise neighboring comers, or having an asymmetric slanting edge at a comer, or having asymmetrically bevelled parts or having discriminating characters marked by laser. The present invention can make the reverse surface mirror-polished and smooth, so that particles on the reverse surface and distortion, cracks or breaks of the wafer decrease.

Description

technical field [0001] The present invention relates to a rectangular nitride semiconductor substrate, and the effort is made to simply add the difference between the front and the back. Because GaN substrates are transparent, there are different problems from opaque Si wafers and GaAs wafers. It can be seen from the surface even if it is marked on the inside, and it can be seen from the inside even if it is marked on the surface. In the case of a circular wafer, two types of chords (OF, IF) with different lengths can be cut out from the side circumference to display the inside of the watch. However, the growth technology of GaN substrates is not yet mature, and it cannot produce quite large circular wafers. In the case of circular wafers, the maximum diameter is only about 1 inch to 2 inches. [0002] Since it is difficult to produce a circular wafer, it is also possible to produce a rectangular wafer with a side of about 1 cm to 2 cm. In the case of a rectangular wafer, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C30B33/00H01L21/02H01L21/304H01L23/544H01S5/30
CPCH01L2924/0002H01L23/544H01L2223/54493H01L2924/00H01S5/30
Inventor 口山雅博平野哲也
Owner SUMITOMO ELECTRIC IND LTD