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Semiconductor memory device

A technology for storage devices and semiconductors, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, and semiconductor/solid-state device components, etc., and can solve the problems of low drain breakdown voltage and increased leakage current.

Active Publication Date: 2004-11-03
SII SEMICONDUCTOR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] The problem of increased leakage current is very significant in ICs with a wide operating temperature range, which can only operate at low temperatures
[0017] At the same time, in many cases, the above-mentioned problems are very significant in ICs with a wide power supply voltage range, especially high maximum operating voltage, in normal operation mode
[0018] Moreover, the above-mentioned problem is particularly remarkable when the breakdown voltage of the drain of the turn-off transistor used as the protection transistor in many cases is low
[0019] In addition, especially when the amount of subthreshold current of the NMOS transistor constituting the voltage detection circuit is large, the above-mentioned problem is often significant

Method used

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Embodiment Construction

[0033] An embodiment of the present invention will be described below. figure 1 is a plan view of a protection transistor aimed at increasing drain breakdown voltage.

[0034] figure 1 The structure of the transistor shown is: contacts 14 are respectively formed on the drain region 10 and the source region 11, which are electrically isolated by the gate electrode 13 electrically connected to each metal electrode 12; the drain region 10 and the source region 11 are respectively connected by The contacts 14 are connected to the metal electrodes 12 so that the desired electrical characteristics are obtained.

[0035] Transistors are directly connected to external terminals and directly give disturbance from the outside, and thus high noise immunity is required for the transistors.

[0036] In the structure of the present invention, the drain region 10 is surrounded by the gate electrode 13 . With this structure, electrical isolation between the drain region 10 and the element ...

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Abstract

Provided is a semiconductor memory device that suppresses a terminal leak current in a test operation mode. The present invention has the following feature. For suppressing the terminal leak current in the operation mode, a layout is adopted in which a polysilicon layer overlaps with an end of a drain, the layer forming a gate electrode of a protective transistor for protecting an IC when being subjected to an electrostatic noise, the protective transistor being connected to an external terminal for the test operation mode. Consequently, a breakdown voltage of an electrostatic breakdown voltage protective transistor is increased.

Description

technical field [0001] The present invention relates to a semiconductor memory device, in particular, an electrically rewritable nonvolatile semiconductor memory integrated circuit (electrically erasable programmable read-only memory) (hereinafter referred to as EEPROM). Meanwhile, the present invention relates to a semiconductor memory device including a test operation mode circuit different from the normal operation mode, which switches the operation mode to the test operation by applying a voltage not smaller than the recommended voltage of the normal operation mode to a predetermined external terminal model. Background technique [0002] Among semiconductor memory devices, a semiconductor memory has a function of switching to a test operation mode by applying a high voltage to an external terminal. The high voltage used here means a voltage exceeding the range of the power supply voltage applied in a normal operation mode. For example, if the maximum operating supply v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28G11C16/02G11C29/14G11C29/46H01L21/822H01L21/8234H01L21/8247H01L27/04H01L27/06H01L27/088H01L27/115H01L29/788H01L29/792
CPCG11C16/04G11C29/46G11C2029/5004
Inventor 和气宏树
Owner SII SEMICONDUCTOR CORP