Memory having shielding effect

Abstract

It is a kind of semiconductor memory that has the screening effect. It consists of multiple character wires, grounding wire control unit and multiple storage units. The storage unit consists of master wire, grounding wire, the first equivalent switch and the second equivalent switch. The master wire is activated by a control signal. The grounding wire connects with the grounding wire control unit. The first equivalent switch connects with the master wire and grounding wire and is controlled by the control signal of the previous storage unit. The second equivalent switch connects with the master wire and the grounding line of the next storage unit and is controlled by the control signal of the next storage unit.

Description

technical field [0001] The present invention relates to a memory, and in particular to a memory with shielding effect. Background technique [0002] Figure 1A Shown is the equivalent circuit diagram of a conventional read-only memory. The memory includes a plurality of memory cell columns (memory cell columns) C connected to adjacent sub-bit lines. Each memory cell column C includes (m+1) memory cells, and is respectively enabled according to the word lines WL0-WLm, wherein m is a positive integer. Each storage unit is used to store 0 or 1 data. Each memory cell can be a transistor, which is given a different threshold voltage Vt according to the data stored in the manufacturing process. The block word line BWL enables the memory block by controlling the switches MB1-MB7. Whether the main bit lines SB0 , SB1 and SB2 are electrically connected to the sense amplifier control unit 130 is determined by the switches MS0 , MS1 and MS2 respectively. The switches MS0 , MS1 and...

AI Technical Summary

Problems solved by technology

Due to the voltage difference between nodes N1 and N2, there is a leakage current, which affects the correctness of reading

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