Device and method for nondestructive inspection on semiconductor device

An inspection method and inspection device technology, applied in semiconductor/solid-state device testing/measurement, electrical components, non-contact circuit testing, etc.

Inactive Publication Date: 2005-01-26
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0043] The second problem is that even if the detection is performed after the formation of the pads is completed so that the post-processing process of the manufacturing is completed, since there are a large number of pads connected to the current change detector, many work steps and a lot of cost are required in order to prepare for the establishment of the electrical connection.
However, the probability of two types of defects existing on the same metal line is very small

Method used

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  • Device and method for nondestructive inspection on semiconductor device
  • Device and method for nondestructive inspection on semiconductor device
  • Device and method for nondestructive inspection on semiconductor device

Examples

Experimental program
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Embodiment A

[0101] Embodiment A contains various examples which are designed for non-destructive inspection according to the present invention.

[0102] Figure 1A , 1B , 2, 3 and 4 are five examples showing the non-destructive inspection device according to Embodiment A of the invention, which are the same as those shown in Figure 8 and 9 The equivalent and identical parts are assigned the same reference numerals.

[0103] Now, will refer to Figure 1A , 2 , 3, and 4 sequentially describe examples 1, 2, 3, and 4 of the nondestructive inspection device. Here, the structures of those examples are described first, and then, the operation procedures will be described.

[0104] exist Figure 1A The non-destructive inspection apparatus 301 of Example 1 shown is configured as follows:

[0105] A laser 1 generates a laser beam which is narrowed in irradiation size by an optical system 2 to generate a laser beam 3 . The laser beam 3 is irradiated on the surface 4 f of the semiconductor d...

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Abstract

A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) (3, 53) is irradiated on a surface (or back) of a semiconductor device chip (4) to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces a magnetic field. A magnetic field detector (5) such as SQUID (55) detects a strength of the magnetic field, based on which a scan magnetic field image is produced. A display device (7) superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip. Incidentally, a semiconductor device wafer (40) is constructed to include a thermoelectromotive force generator (21) and its wires (20a).

Description

technical field [0001] The present invention relates to apparatus and methods for non-destructive inspection of chips of semiconductor devices, and in particular to non-destructive inspection for detecting electrically active defects. The present invention also relates to a semiconductor device suitable for non-destructive inspection, and a method of manufacturing the semiconductor device. [0002] This application is based on Patent Application Hei 10-272788, Patent Application Hei 11-67744 and Patent Application Hei 11-133283 filed in Japan, the contents of which are incorporated herein. Background technique [0003] Usual non-destructive inspection techniques are known from papers such as the title "Thermal Electromotive Force-Based OBIC Analysis Technique", which was presented as material for the 132 meeting of the Japan Research Institute Promotion Fund 132 Committee on Research Aspects, Involving Charged Particles industrial applications. Here, "OBIC" is an abbreviat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66G01R31/303G01R31/308G01R31/311
CPCG01R31/311H01L22/00
Inventor 二川清
Owner NEC ELECTRONICS CORP
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