Multilayer structure bonded seal protective capacity pressure sensor and producing method

A pressure sensor and multi-layer structure technology, which is applied in the direction of fluid pressure measurement using capacitance changes, etc., can solve the problems of poor anti-interference ability of the sensor, large temperature influence, unsatisfactory effect, etc., and achieve stable working characteristics and ideal zero pressure characteristics , good effect of overload protection

Inactive Publication Date: 2005-03-02
XIAMEN UNIV
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Problems solved by technology

The silicon piezoresistive pressure sensor has the characteristics of small size, simple structure and manufacturing process, and high sensing sensitivity. The disadvantage is that the sensor has poor anti-interference ability and large temperature influence.
Sealing the capacitive cavity of silicon-glass capacitive

Method used

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  • Multilayer structure bonded seal protective capacity pressure sensor and producing method
  • Multilayer structure bonded seal protective capacity pressure sensor and producing method
  • Multilayer structure bonded seal protective capacity pressure sensor and producing method

Examples

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Example Embodiment

[0041] The following embodiments will further illustrate the present invention in conjunction with the drawings.

[0042] As shown in Figures 1 to 5, the multi-layer structure bonding and sealing protection type capacitive pressure sensor includes a main silicon chip 18 with a pressure-sensitive film 10, a glass substrate 19 provided with a capacitor cavity electrode 16, and a capacitor pressure sensor for sealing the capacitor cavity. Seal the glass 1 and protect the silicon wafer 4. The square silicon diaphragm or the circular silicon diaphragm 11 is made of P-type doped silicon semiconductor material using P + Etching technology or PN junction chemical etching technology to form diaphragm or SOI (silicon on insulator) silicon wafer production. It can be specifically described as follows. On the lower surface of the main silicon wafer 18, there is a layer made of P +The diaphragm 11 is formed by etching technology or PN junction chemical etching technology or SOI (silicon on ins...

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Abstract

Multi-structure linkage enclosed protecting capacitance pressure sensor and its manufacturing method relate to a pressure sensor, supplying sensor with good hermetical characteristic, stable performance, excellent bearing capacity, high linearity and sensibility, and technical method with good versatility and low manufacturing cost, having prime silicon slice, glass substrate, enclosed glass, silicon film electron and capacitance cavity electron. Wash, dry, oxidize the prime silicon slice, erode capacitance cavity, then spread to form P+layer or PN node of film, creating metal electron; isolation glass is made on metal electron, prime silicon slice and glass slice is linked; dual-plane polishing glass slice used for enclosing glass is linked with protecting silicon slice; enclosing glass is isolation wall has static electricity linkage with enclosing glass. Use linkage structure of two pieces of silicon and two pieces of glass, and multi-structure static electricity linkage technique enclosing capacitance cavity, to produce capacitance cavity type micro pressure sensor, avoiding effectively the problem of capacitance cavity enclosing linkage.

Description

technical field [0001] The invention relates to a pressure sensor, in particular to a multi-layer structure bonding and sealing protection capacitive pressure sensor. Background technique [0002] Due to the good mechanical properties of silicon materials, with the maturity of semiconductor technology, there are means to make sensors with silicon materials. First, the silicon piezoresistive pressure sensor was researched and manufactured. The silicon piezoresistive pressure sensor has the characteristics of small size, simple structure and manufacturing process, and high sensing sensitivity. The disadvantage is that the sensor has poor anti-interference ability and large temperature influence. Capacitive pressure sensors made of silicon and glass bonding have the characteristics of small size, structure, simple manufacturing process, and high sensing sensitivity compared with silicon piezoresistive pressure sensors, and also have good structural stability, high strength, an...

Claims

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Application Information

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IPC IPC(8): G01L9/12
Inventor 冯勇建
Owner XIAMEN UNIV
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