Multilayer structure bonded seal protective capacity pressure sensor and producing method

Abstract

Multi-structure linkage enclosed protecting capacitance pressure sensor and its manufacturing method relate to a pressure sensor, supplying sensor with good hermetical characteristic, stable performance, excellent bearing capacity, high linearity and sensibility, and technical method with good versatility and low manufacturing cost, having prime silicon slice, glass substrate, enclosed glass, silicon film electron and capacitance cavity electron. Wash, dry, oxidize the prime silicon slice, erode capacitance cavity, then spread to form P+layer or PN node of film, creating metal electron; isolation glass is made on metal electron, prime silicon slice and glass slice is linked; dual-plane polishing glass slice used for enclosing glass is linked with protecting silicon slice; enclosing glass is isolation wall has static electricity linkage with enclosing glass. Use linkage structure of two pieces of silicon and two pieces of glass, and multi-structure static electricity linkage technique enclosing capacitance cavity, to produce capacitance cavity type micro pressure sensor, avoiding effectively the problem of capacitance cavity enclosing linkage.

Description

technical field [0001] The invention relates to a pressure sensor, in particular to a multi-layer structure bonding and sealing protection capacitive pressure sensor. Background technique [0002] Due to the good mechanical properties of silicon materials, with the maturity of semiconductor technology, there are means to make sensors with silicon materials. First, the silicon piezoresistive pressure sensor was researched and manufactured. The silicon piezoresistive pressure sensor has the characteristics of small size, simple structure and manufacturing process, and high sensing sensitivity. The disadvantage is that the sensor has poor anti-interference ability and large temperature influence. Capacitive pressure sensors made of silicon and glass bonding have the characteristics of small size, structure, simple manufacturing process, and high sensing sensitivity compared with silicon piezoresistive pressure sensors, and also have good structural stability, high strength, an...

AI Technical Summary

Problems solved by technology

The silicon piezoresistive pressure sensor has the characteristics of small size, simple structure and manufacturing process, and high sensing sensitivity. The disadvantage is that the sensor has poor anti-interference ability and large temperature influence.

Sealing the capacitive cavity of silicon-glass capacitive pressure sensors is a problem because it is difficult, if not impossible, to obtain a hermetic bonding material that bonds well to glass, silicon, and metal at the same time

In order to solve this problem, people choose various materials to seal the groove of the lead-out electrode, but the effect is not satisfactory.

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