Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process

A pressure sensor, electrostatic bonding technology, applied in the direction of fluid pressure measurement using capacitance changes, etc., can solve the problems of poor anti-interference ability of the sensor, unsatisfactory effect, large temperature influence, etc., and achieve good structural stability and versatility , The effect of the ideal zero pressure characteristic

Inactive Publication Date: 2004-07-07
XIAMEN UNIV
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The silicon piezoresistive pressure sensor has the characteristics of small size, simple structure and manufacturing process, and high sensing sensitivity. The disadvantage is that the sensor has poor anti-interference ability and large temperature influence.
In order to solve this problem, people choose various materials to seal the groove of the lead-out electrode, but the effect is not ideal, because it is very difficult to make the sealing adhesive material have good adhesion to glass, silicon and metal at the same time. even impossible

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process
  • Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process
  • Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Such as figure 1 As shown, the pressure sensor of the electrostatically bonded sealed capacitor cavity is provided with one, an upper silicon chip 12 with a sensing film, the other is a glass substrate 14 with electrodes, and the third is a silicon chip (called a sealed silicon chip) used to seal the capacitor cavity. sheet) 13. There is a layer of P on the lower surface of the upper silicon wafer 12 + The diaphragm 15 formed by etching technology or PN junction chemical etching technology, the silicon diaphragm can be square or circular, and the pressure sensing diaphragm 16 is on this layer, which is a part of the diaphragm 15 . The sensory membrane 16 on the upper silicon wafer 12 is surrounded by a partition wall 20 . An opening 18 is also provided on the upper silicon wafer 12 . The pressure sensing membrane 16 is separated from the opening 18 by a partition wall 20 . The capacitor cavity 22 is made by photolithography and etching on the lower surface of the up...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Via hole diameteraaaaaaaaaa
Login to View More

Abstract

A pressure sensor with a capacitor cavity sealed by electrostatic bonding is composed of an upper silicon sheet with capacitor cavity on its lower surface, a glass substrate with capacitor electrode and membrane electrode on its polished upper surface, contact electrode on its polished lower surface and a through hole between both surfaces, a sealing silicon sheet whose upper surface is connected with contact electrode by electrostatic bonding, and two output electrodes set up on the sealing silicon sheet and membrane electrode respectively. Its advantages are high sealing performance, stable working performance, high over-pressure tolerance, and high linearity and sensitivity.

Description

technical field [0001] The invention relates to a pressure sensor, in particular to a capacitive miniature pressure sensor made by sealing a capacitor cavity with an electrostatic bonding process and a manufacturing method thereof. Background technique [0002] Due to the good mechanical properties of silicon materials, with the maturity of semiconductor technology, there are means to make sensors with silicon materials. First, the silicon piezoresistive pressure sensor was researched and manufactured. The silicon piezoresistive pressure sensor has the characteristics of small size, simple structure and manufacturing process, and high sensing sensitivity. The disadvantage is that the sensor has poor anti-interference ability and large temperature influence. Capacitive pressure sensors and silicon piezoresistive pressure sensors made of silicon and glass bonding not only have the characteristics of small size, simple structure and manufacturing process, and high sensing sens...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01L9/12
Inventor 冯勇建
Owner XIAMEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com