Micro mechanical switch of multiple resonance points

Abstract

The invention discloses a micro mechanical switch with multiple resonance points belonging to semiconductor device field. There is oxidization layer, lower electrode board and silicon nitride layer, a sacrifices layer is arranged on the silicon nitride layer to support the upper electrode. There has at least one metal connection beam between the upper electrode and the ground wire, and at least one beam is grounded, the other is connected to the media layer of the ground wire or be suspended, and forms capacitance to ground; the connection uses straight beam, folding beam or folding spring structure to increase effective inductance. When in close state, the insulating grade expresses several resonance points, and improves the resonance character of micro-mechanical switch under the same structure feature.

Description

technical field [0001] The invention belongs to the scope of semiconductor devices, in particular to a micromechanical switch with multiple resonance points. Background technique [0002] The switch given by C.Goldsmith, J.Randall, etc. in "Characteristics of micromachined switch at microwave frequencies" in the document "IEEE MTT-S Digest: pp1141-1144, 1996" is a traditional capacitive micromechanical switch, and its off state Isolation increases slowly with frequency. Generally, after a relatively high frequency (such as 30GHz), the isolation degree reaches the practical requirement (such as > 30dB). On the other hand, the applicable frequency band of the switch is generally wide (such as 30GHz ~ 100GHz, the isolation is greater than 30dB). Therefore, in general, this type of switch is only suitable for higher frequency bands, and cannot be used in lower frequency bands due to poor isolation. [0003] Jeremy B. Muldavin and Gabriel M. Rebeiz, "High-Isolation CPW MEMS...

AI Technical Summary

Problems solved by technology

However, this type of inductance-modulated capacitive switch generally has only one resonance point, and the applicable frequency band of the switch is only near the resonance point, and the applicable bandwidth is generally narrow (such as <10GHz), so it cannot be used in a broadband environment.

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