Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Micro mechanical switch of multiple resonance points

A micro-mechanical switch and multi-resonance technology, applied in relays, electrostatic relays/electro-adhesion relays, electrical components, etc., can solve problems such as narrow applicable bandwidth, improve resonance characteristics, reduce resonance frequency, and expand applicable frequency bands.

Inactive Publication Date: 2005-03-02
TSINGHUA UNIV
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this type of inductance-modulated capacitive switch generally has only one resonance point, and the applicable frequency band of the switch is only near the resonance point, and the applicable bandwidth is generally narrow (such as <10GHz), so it cannot be used in a broadband environment.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro mechanical switch of multiple resonance points
  • Micro mechanical switch of multiple resonance points

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] The invention provides a micromechanical switch with multiple resonance points. exist figure 1 , figure 2 In the structural diagram of the micromechanical switch shown, there are an oxide layer 4, a lower plate 3 and a silicon nitride layer 2 on the silicon substrate 6 from bottom to top, and the sacrificial layer 5 supports the upper electrode on the silicon nitride layer 2. 1. There is more than one metal connection beam 8, 9, 10 or 11 between the upper electrode 1 and the ground wire 7, at least one beam 11 is directly grounded, and the rest of the non-ground beams are connected to the silicon nitride layer on the ground wire or Suspended in the air to form a ground capacitance; the connecting beam adopts a straight beam, folded beam or folded spring structure to increase the equivalent inductance; by adjusting the direct-to-ground area of ​​the non-ground beam and the ground wire, or the dielectric thickness between the two, the ground Any two capacitances of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a micro mechanical switch with multiple resonance points belonging to semiconductor device field. There is oxidization layer, lower electrode board and silicon nitride layer, a sacrifices layer is arranged on the silicon nitride layer to support the upper electrode. There has at least one metal connection beam between the upper electrode and the ground wire, and at least one beam is grounded, the other is connected to the media layer of the ground wire or be suspended, and forms capacitance to ground; the connection uses straight beam, folding beam or folding spring structure to increase effective inductance. When in close state, the insulating grade expresses several resonance points, and improves the resonance character of micro-mechanical switch under the same structure feature.

Description

technical field [0001] The invention belongs to the scope of semiconductor devices, in particular to a micromechanical switch with multiple resonance points. Background technique [0002] The switch given by C.Goldsmith, J.Randall, etc. in "Characteristics of micromachined switch at microwave frequencies" in the document "IEEE MTT-S Digest: pp1141-1144, 1996" is a traditional capacitive micromechanical switch, and its off state Isolation increases slowly with frequency. Generally, after a relatively high frequency (such as 30GHz), the isolation degree reaches the practical requirement (such as > 30dB). On the other hand, the applicable frequency band of the switch is generally wide (such as 30GHz ~ 100GHz, the isolation is greater than 30dB). Therefore, in general, this type of switch is only suitable for higher frequency bands, and cannot be used in lower frequency bands due to poor isolation. [0003] Jeremy B. Muldavin and Gabriel M. Rebeiz, "High-Isolation CPW MEMS...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01H59/00
Inventor 刘泽文雷啸锋刘理天李志坚
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com