Light receiving device, light receiving unit with built- in circuit and optical disk device
A technology of optical receiving devices and optical disc devices, which is applied in the direction of circuits, electric solid-state devices, semiconductor devices, etc., can solve the problems of signal output changes, inapplicability to receiving light with short wavelengths, etc., and achieve the effect of increased sensitivity and high sensitivity
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 example
[0045] Figure 1A is a plan view showing the light receiving device in the first embodiment of the present invention, and Figure 1B is taken along the line I-I' Figure 1A cross-sectional view of . exist Figure 1A and 1B In , contacts, metal interconnections, and interlayer insulating films formed after the contact step are omitted. exist Figure 1A In , the first silicon dioxide 105 , the silicon nitride 106 and the second silicon dioxide 107 are omitted.
[0046] The light-receiving device includes an impurity concentration of about 1E18cm on the silicon substrate 100 -3 , a first P-type diffusion layer 101 with a thickness of about 1 μm and a thickness of about 10 μm to 20 μm and an impurity concentration of about 1E13 to 1E16 cm -3 P-type semiconductor layer 102. In the surface portion of the P-type semiconductor layer 102, an impurity concentration of about 1E17 to 1E20 cm is set. -3 Two N-type diffusion layers 103, 103 are used to form two light-receiving componen...
no. 2 example
[0058] image 3 is a cross-sectional view showing a light receiving device in a second embodiment of the present invention. exist image 3 in, with Figure 1B Constituent elements having the same function as the light-receiving device in the first embodiment are denoted by the same reference numerals, and a detailed description thereof is omitted.
[0059] Such as image 3As shown, the difference between the light-receiving device in this embodiment and the light-receiving device in the first embodiment lies in: on the N-type diffusion layers 103, 103 that become light-receiving components, and on the two N-type On the P-type semiconductor layer 102 between the diffusion layers 103, 103, four layers of light-transmitting films are formed, and a molding resin 204 is provided on the light-transmitting films.
[0060] The four-layer light-transmitting film consists of a first silicon dioxide 200 with a thickness of about 9 nm, a first silicon nitride 201 with a thickness of a...
no. 3 example
[0064] Figure 4 is a cross-sectional view showing a light receiving device in a third embodiment of the present invention. In this embodiment, descriptions of contacts, metal interconnections, interlayer insulating films, and the like formed after the contact step are omitted.
[0065] The light-receiving device includes an impurity concentration of about 1E18cm on the silicon substrate 10 -3 , a P-type diffusion layer 11 with a thickness of about 1 μm, and an impurity concentration on the P-type diffusion layer 11 of about 1E13 to 1E16 cm -3 . A P-type semiconductor 12 with a thickness of about 10 μm to 20 μm. On the surface portion of the P-type semiconductor 12, set an impurity concentration near the surface from 1E17 to 1E20cm -3 The N-type diffusion layer 13, and the PN structure formed by the N-type diffusion layer 13 and the P-type semiconductor 12 becomes a light receiving part. It should be noted that the impurity forming the N-type diffusion layer 13 may be any ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More