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MOS switching grid boosting circuits

A MOS tube and circuit technology, applied in the field of new MOS switch gate booster circuit, can solve problems such as increasing cost

Inactive Publication Date: 2005-05-11
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0019] The most direct way to increase the gate-source voltage is to increase the power supply voltage of the circuit, but from the perspective of low-voltage systems, the cost is increased because one more power supply circuit is required

Method used

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  • MOS switching grid boosting circuits
  • MOS switching grid boosting circuits
  • MOS switching grid boosting circuits

Examples

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Embodiment Construction

[0040] transistor

[0041] Transistor parameters in the example in Table 1

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Abstract

The invention can make the grating voltage of signal switch device not to relate to the input signals and keep on-resistance at constant, so that the loss of signals are greatly reduced. The substrate of NMOS switch circuit is always connected with lowest level of the circuit in this way the ordinary twin-hole CMOS technology can be easily implemented.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a novel MOS switch grid booster circuit. Background technique [0002] MOS type devices have excellent electrical characteristics as switches, so they are widely used in mixed signal circuits, such as switched capacitor circuits. But we know that the MOS type device is not an ideal switch. It has an on-resistance when it is turned on. The resistance value is related to the geometric size of the switching device and its gate voltage and threshold voltage. [0003] R on = 1 μC ox w l ( V gs - V t ) ...

Claims

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Application Information

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IPC IPC(8): H03K17/16H03K17/687
Inventor 张剑云张卫
Owner FUDAN UNIV
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