Long life ionic source of ion injection machine

A technology of ion implantation and ion source, which is applied in the field of long-life ion source of ion implanter, which can solve the problems of short service life of ion source and achieve the effects of high multi-charge yield, small thermal deformation, good stability and reliability

Inactive Publication Date: 2005-08-03
BEIJING ZHONGKEXIN ELECTRONICS EQUIP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims at the shortcoming of the short service life of the ion source

Method used

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  • Long life ionic source of ion injection machine

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[0019] The structural features of the long-life ion source of the ion implanter of the present invention will be further introduced below in conjunction with the drawings and specific embodiments.

[0020] The ion source discharge arc chamber is composed of two end plates 3 and a lead plate 6. The discharge arc chamber is placed in the ion source housing 1 and is supported by the left support plate 2 and the right support plate 12 in the ion source housing 1 . Ions are generated from the arc discharge chamber and are led out from the arc discharge chamber to the extraction system.

[0021] The reflector connecting rod 4 connects the reflector 5 and the indirect cathode 7 so that they are at the same potential.

[0022] The reflector 5 emits electrons generated by the cathode 7. The reflector 5 is supported by an insulator and has the same potential as the filament. Therefore, the reflector 5 has a repulsive effect on electrons, allowing the emitted electrons to return to the catho...

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Abstract

This invention relates to a long life ionic source of ion injection machine used in ion injection technology for manufacturing semiconductors including: an ionic source shell, two supporting plates, two end plates, a reflection pole connection bar, a reflecting pole, a lead out plate, an indirectly heated cathode, a screen tube, a heating electronic gun, a heat screen plate, two filament fixing rods, a source magnetic field excitation wire packet, an insulation material block and an induction pipe. Advantages: 3-4times of the lifetime of the ordinary ionic source, stable and full discharge.

Description

technical field [0001] The invention relates to a long-life ion source for an ion implanter, in particular to the long-life ion source for an ion implanter used in the ion implantation process of semiconductor manufacturing. Background technique [0002] In recent years, with the development of semiconductor integrated circuit technology and chip technology, in semiconductor integrated circuit manufacturing technology, the integration level is getting higher and higher, the circuit scale is getting bigger and bigger, and the unit device size in the circuit is getting smaller and smaller. Equipment puts forward higher requirements. As one of the key equipment of the semiconductor ion doping process line, the ion implanter also puts forward high requirements on it. The ion implanter is required to have: good reliability of the whole machine, high production efficiency, and wide energy range of various charged ions Injection, precise control of beam injection energy accuracy, ...

Claims

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Application Information

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IPC IPC(8): H01J27/02H01J37/08H01L21/265
Inventor 戴习毛
Owner BEIJING ZHONGKEXIN ELECTRONICS EQUIP
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