Vertical bipolar transistor and method of manufacturing the same

Abstract

Provided is a vertical bipolar transistor with an increased current amplification rate, and to provide its manufacturing method. In the vertical bipolar transistor of a semiconductor device, a source-drain region 18c with a first conductivity type in a CMOS is formed as an emitter region 18a in a bipolar part, a first well region 13 with a second conductivity type is formed as a base region, and a second well region 14 with the first conductivity type or a semiconductor substrate 31 with the first conductivity type is formed as a collector region, respectively. It has an isolation structure Is provided to define the emitter region 18a on the first well region 13.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a vertical bipolar transistor and a manufacturing method thereof. Background technique [0002] Conventionally, in circuits that do not require high-performance bipolar transistors, bipolar transistors that can be manufactured in a CMOS process without increasing the number of steps have been used in order to reduce costs. [0003] This is to use the source / drain region of the first conductivity type as the emitter region, use the well region of the second conductivity type forming the source / drain region as the base region, and use the well region of the first conductivity type as the collector region . [0004] Figure 13 ~ Figure 17 A manufacturing process of such a conventional bipolar transistor is shown. [0005] That is, if Figure 13 As shown, for example, a separation region (STI) 51 is selectively formed on a P-type silicon substrate 50 . ...

AI Technical Summary

Problems solved by technology

[0011] In short, in the above-mentioned bipolar transistors, the impurity concentration in the well region increases with the miniaturization of the separation region, or the latch-up effect must be suppressed, and the current amplification factor must be reduced.

[0012] In addition, when further miniaturized, the well concentration increases and becomes denser, which further reduces its current amplification rate

Images