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Light-emitting diode with silicon carbide substrate

By designing a basically undoped SiC substrate and a nucleation buffer structure on a high-resistivity silicon carbide substrate, with the electrode located on the epitaxial layer side, the problems of lattice mismatch and electrode shielding are solved, and high energy conversion efficiency and light output efficiency are achieved. improvement.

Inactive Publication Date: 2012-05-30
DALIAN MEIMING EPITAXY TECHNOLOGY CO LTD
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Problems solved by technology

[0008] The second issue is that the SiC substrate is required to be highly doped in order to form a low impedance current path from the top electrode to the bottom electrode during device operation.
In the case where the substrate is highly doped, SiC has better absorption of light energy, especially light in the blue-green and near-ultraviolet range (wavelength range of about 400-550nm), which reduces the The efficiency of the substrate of the

Method used

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Embodiment Construction

[0018] FIG. 2 shows a cross-sectional view of one embodiment of an LED of the present invention, generally designated 100 . The LED is built on a substrate 101 . Preferably, the substrate 101 is undoped and is single crystal SiC with a resistivity greater than .09Ω-cm. SiC was chosen because of its high refractive index and its close lattice match to GaN (3.5% mismatch) and related III-V nitrides. Other substrates known to those skilled in the art to substantially match the properties of SiC may also be used.

[0019] The substrate 101 is usually grown by a vapor transfer method, which is well known to those skilled in the art, and will not be further discussed here. Such substrates can be purchased from Sterling Semiconductor Corporation, 22660 Executive Drive, Suite 101 Sterling, Virginia 20166-9535 or II-VI Inc., 375 Saxonburg Blvd., Saxonburg, PA 16056. The other semiconductor layers described in this section were grown using metal organic chemical vapor deposition (MOC...

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Abstract

A lignt-emitting diode (100) is based on an undoped intrinsic SiC substrate (101) on which are grown: an insulating buffer or nucleation structure (102); a light-emitting structure (112); window layers (107, 108); a semi-transparent conductive layer (119); a bond pad adhesion layer (109); a p-type electrode bond pad (110); and an n-type electrode bond pad (115). In one embodiment, the light-emitting surface (130) of the substrate (101) is roughened to maximize light emission.

Description

technical field [0001] The present invention relates to light emitting diode (LED) devices and methods of producing and operating the same. More specifically, the present invention relates to LEDs with improved design and input characteristics. Still further, the present invention particularly relates to LEDs formed on high-resistivity silicon carbide substrates with lateral device structures. Background technique [0002] The efficiency of light emitting diodes (LEDs) is limited by several factors that pose recurring challenges to LED device engineers. Among other things, the light generated can be absorbed by the layers of semiconductor material that make up the LED, and can be shadowed by the electrodes required to bring active current to the active region of the device. [0003] Silicon carbide (SiC) with relatively low resistivity (ie, highly doped) is commonly used as a conductive substrate material for high-brightness LEDs in the blue, green, and near-ultraviolet sp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L31/0312H01L33/32
CPCH01L33/32H01L33/007H10H20/01335H10H20/825
Owner DALIAN MEIMING EPITAXY TECHNOLOGY CO LTD
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