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Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas

A technology of thin film deposition and clean gas, applied in the direction of reducing greenhouse gases, electrical components, gaseous chemical plating, etc., can solve the problems of increased contact possibility, achieve the effects of improving productivity, shortening supply cycle, and shortening film deposition cycle

Active Publication Date: 2011-05-18
JUSUNG ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Here, when the rotating shaft 48 is rotated at a high speed to shorten the processing time, the possibility of contact between the raw material gas and the reaction gas in the air increases, thereby inhibiting the improvement of the film yield

Method used

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  • Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas
  • Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas
  • Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas

Examples

Experimental program
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Embodiment Construction

[0042] like figure 2 As shown, a thin film deposition system according to an embodiment of the present invention includes a reaction chamber 100 having a gas outlet 110 formed therethrough for discharging internal gas to the outside of the reaction chamber 10; a support member 200 positioned on In the reaction chamber 100, there is at least one base 300 for installing an object 600, such as a semiconductor substrate, on which a thin film can be deposited; a first sprayer 400 rotating around a vertical axis, which is used The processing gas of gas and reaction gas is sprayed alternately to the surface of the object 600 installed on the base 300; and the second gas sprayer 500 installed on the first gas sprayer 400 is used to spray the cleaning gas surface of object 600 on seat 300 to clean object 600 and the system.

[0043] The base 300 is constructed such that the base 300 heats the object 600 mounted thereon thereby inducing a chemical reaction on the surface of the object...

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Abstract

Disclosed are thin film deposition system and method. The thin film deposition system includes a reaction chamber; at least one susceptor installed in the reaction chamber for mounting a substrate thereon; a first gas sprayer rotatably located above the susceptor; and at least one second gas sprayer installed above the first gas sprayer for spraying purge gas. The thin film deposition system increases the absorption rate of source gas onto the surface of the substrate, efficiently shortens the supply cycles of the gases to improve the productivity thereof, and improves the cleaning effect of the purge gas so that a thin film is stably deposited on the substrate.

Description

technical field [0001] The present invention relates to a thin film deposition system, and more particularly to a thin film deposition system having at least one first gas atomizer and a second gas atomizer, wherein the at least one first gas atomizer has a and a rotatable structure of reaction gas, the second gas atomizer is located on the first gas atomizer for spraying cleaning gas, and a method of depositing a thin film using the thin film deposition system, thereby improving the deposition effect of the thin film and productivity. Background technique [0002] When the substrate has a large diameter, it is difficult to deposit a thin film with a uniform thickness on the entire surface of the large-diameter substrate. In addition, when a plurality of substrates are introduced into a single reaction chamber to deposit a thin film on the substrates, it is difficult to form a thin film having the same thickness on all the substrates. This is due to the fact that the raw g...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455H01L21/205C23C16/00C23C16/42C23C16/56
CPCC23C16/42C23C16/56Y02E30/30C23C16/45574C23C16/45589C23C16/4583
Inventor 朴海进罗圣闵
Owner JUSUNG ENG