Boron phosphide-based semiconductor light-emitting device and production method thereof

Abstract

A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from the first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a high-resistance boron phosphide-based semiconductor amorphous layer or a first boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of said first semiconductor layer; a pad electrode formed on said high-resistance or opposite conductivity-type boron phosphide-based semiconductor amorphous layer for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive boron phosphide-based crystalline layer extending optionally to a portion of said boron phosphide-based semiconductor amorphous layer, wherein said pad electrode is in contact with said boron phosphide-based semiconductor crystalline layer at a portion of said pad electrode above the bottom of said pad electrode.

Description

[0001] Cross References to Related Applications [0002] This application is based upon an application filed under 35 U.S.C. §111(a) pursuant to 35 U.S.C. §119(e)(1), requiring a provisional application filed under 35 U.S.C. §111(b) on January 10, 2003 60 / 438,997 priority. technical field [0003] The present invention relates to a boron phosphide-based semiconductor light emitting device capable of obtaining high emission intensity and equipped with a pad electrode having a structure for efficiently providing a wide emission area and a method for manufacturing the same. Background technique [0004] In recent years, techniques for manufacturing light-emitting devices have been disclosed, such as light-emitting diodes (abbreviated as LED) and laser diodes (abbreviated as LD) from layers formed of boron phosphide (chemical formula: BP), which is a Group III-V compound semiconductors (see, eg, US Patent 6,069,021). Boron phosphide-based semiconductors tend to form a P-type c...

AI Technical Summary

Problems solved by technology

[0006] However, using the conventional configuration in which the bottom of the electrode is brought into contact with the surface of the N-type or P-type conductive boron phosphide layer, the problem cannot be completely solved, wherein the current supplied for driving the light-emitting device (i.e., the device operating current), Flows from the bottom of the electrode into the layer below in a short circuit

Therefore, in the LED from which the emitted light is drawn out through the boron phosphide crystal layer provided on the light emitting layer to form an electrode, there arises such a problem that a wide spread of the device operating current in the light emitting region cannot be obtained.

Therefore, the increase in the emission intensity of boron phosphide-based semiconductor light-emitting devices cannot be fully obtained by increasing the light-emitting area at present.

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