Mask patterns for semiconductor device fabrication and related methods and structures

Abstract

Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

Description

related application This application claims priority to Korean Patent Application No. 10-2004-0076349 filed with the Korean Intellectual Property Office on September 23, 2004, the disclosure of which is hereby incorporated by reference in its entirety. technical field The present invention relates to semiconductor device manufacturing, and more particularly to mask patterns and related methods and structures for semiconductor device manufacturing. Background technique In a conventional patterning process used in the manufacture of semiconductor devices, a photoresist pattern can be formed on a film to be etched (for example, a silicon film, a dielectric film, or a conductive film) for pattern formation. The film can be etched using the photoresist pattern as an etch mask to form a desired pattern. As the integration level of semiconductor devices increases, forming fine patterns including contact holes with smaller opening sizes or spaces with smaller widths requires sm...

AI Technical Summary

Problems solved by technology

According to this technology, silicon content can be limited, so it may be difficult to obtain sufficient resistance to dry etching

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