Supercharge Your Innovation With Domain-Expert AI Agents!

Reflective electrode and compound semiconductor light emitting device including the same

一种反射电极、发光器件的技术，应用在半导体器件、半导体激光器、半导体/固态器件制造等方向，能够解决FCLED特性不稳定、FCLED短寿命等问题，达到优良欧姆接触特性、低工作电压、低光吸收系数的效果

Inactive Publication Date: 2006-04-12
SAMSUNG ELECTRONICS CO LTD
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there are disadvantages in that the FCLED to which the reflective electrode is applied has a short lifespan, and the characteristics of the FCLED are unstable.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reflective electrode and compound semiconductor light emitting device including the same
  • Reflective electrode and compound semiconductor light emitting device including the same
  • Reflective electrode and compound semiconductor light emitting device including the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will now be described more fully with reference to the accompanying drawings, in which embodiments of the invention are shown.

[0024] figure 1 is a sectional view showing a reflective electrode according to a first embodiment of the present invention.

[0025] refer to figure 1 , the reflective electrode 22 is formed on the p-type compound semiconductor layer 20 . The reflective electrode 22 according to the first embodiment of the present invention includes a first electrode layer 22 a , a third electrode layer 22 c and a fourth electrode layer 22 d sequentially formed on the p-type compound semiconductor layer 20 .

[0026] The first electrode layer 22a is in ohmic contact with the p-type compound semiconductor layer 20 . The first electrode layer 22a is formed of one of Ag and Ag alloy with a thickness of 0.1-500 nm. Here, the Ag alloy includes a group consisting of Mg, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising a first electrode layer formed one of a Ag and Ag-alloy and forms an ohmic contact with the p-type compound semiconductor layer, a third electrode layer formed of a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer, and a fourth electrode layer formed of a light reflective material on the third electrode layer.

Description

technical field [0001] The present invention relates to a reflective electrode and a compound semiconductor light emitting device including the same, and more particularly, to a reflective electrode having low contact resistance, high reflectance and improved electrical conductivity and a compound semiconductor light emitting device having the same device. Background technique [0002] Compound semiconductor light-emitting devices can convert electrical signals into light using the properties of compound semiconductors. Recently, laser light of a semiconductor laser diode such as a light emitting diode (LED) or a laser diode (LD) is actually used in the field of application, such as in optical communication, multiplex communication, or space communication. Semiconductor lasers are widely used as light sources for transmitting data, recording data, or reading data in devices such as compact disc players (CDP) or digital versatile disc players (DVDP), or in optical communicat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01S5/00H01L33/32H01L33/40
CPCH01S5/0425H01S5/34333H01L33/32H01S5/18H01S5/2027H01L33/405H01L21/28575H01S5/1078B82Y20/00H01S5/04253H01S5/04257
Inventor 金美良郭准燮
Owner SAMSUNG ELECTRONICS CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com