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High quality single crystal and method of growing the same

A technology for growing single crystals and single crystals, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., and can solve the problems of not being able to obtain high-quality single crystals and not fully ensuring the productivity of high-quality single crystals

Active Publication Date: 2006-05-03
LG SILTRON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even according to Korean Patent Application No. 1999-7009309 concerning such solid-liquid interface morphology, high-quality single crystals cannot be obtained
Therefore, none of these conventional techniques can sufficiently guarantee the productivity of high-quality single crystals

Method used

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  • High quality single crystal and method of growing the same
  • High quality single crystal and method of growing the same
  • High quality single crystal and method of growing the same

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Embodiment Construction

[0020] The present invention is based on the fact that in addition to controlling the temperature gradient of the solid phase single crystal and the morphology of the solid-liquid interface, there is also a more critical factor that is conducive to the significant reduction of point defects in the growth of high-quality single crystals. . According to the present invention, in order to overcome the deficiencies of the solid phase reaction, such as the diffusion of point defects after crystallization, the fluid state of the liquid phase immediately before solidification is thoroughly analyzed, and it is found for the first time that the temperature distribution of the melt is the most important One of the factors.

[0021] Generally, the mechanism of crystal growth includes growth units, such as atoms or molecules moving toward the crystal growth interface or metastable region and then attaching to it. In this case, the driving force for the growth unit to move toward the crystal g...

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Abstract

Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direction of the single crystal from the interface of the single crystal and the melt to the bottom of the crucible. The increasing temperature of the melt is kept to preferably have a greater temperature gradient than the decreasing temperature thereof. Preferably, the axis is set to pass through the center of the single crystal. Preferably, the convection of the inner region of the melt is made smaller than that of the outer region thereof.

Description

Technical field [0001] The present invention relates to a method for growing a single crystal, and more specifically, to a method for growing a high-quality single crystal from the melt by controlling the temperature distribution of the melt. Background technique [0002] Generally, the temperature distribution of solid crystals is controlled to obtain high-quality single crystals, which can improve the yield of electronic components such as semiconductors. This is to control the stress caused by the shrinkage caused by the cooling after crystallization, or the behavior of generating point defects during the cooling process. [0003] Briefly introducing this conventional technique for controlling the temperature distribution of solid crystals to obtain high-quality single crystals, Korean Patent Application No. 2000-0013028 discloses a method for controlling the temperature distribution of grown GaAs single crystals to eliminate The method of thermal stress formed therein, and Ja...

Claims

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Application Information

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IPC IPC(8): C30B35/00
CPCC30B15/22C30B29/02C30B29/10
Inventor 赵铉鼎
Owner LG SILTRON
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