Transistor array substrate and display panel

Abstract

The transistor array substrate of the present invention reduces the voltage drop of wiring. The transistor array substrate includes: a substrate; a plurality of driving transistors arranged in a matrix on the substrate, and a gate insulating film is sandwiched between the gate, the source, and the drain; a plurality of signal lines connected to the The gates of a plurality of drive transistors are laid out together and arranged to extend in a predetermined direction on the substrate; a plurality of supply lines are laid out together with the sources and drains of the drive transistors, and are arranged across the gates. The electrode insulating film is arranged crosswise with the plurality of signal lines, and conducts with one of the source and drain of the driving transistor; a plurality of power supply wirings are respectively stacked on the plurality of supply lines along the plurality of supply lines .

Description

technical field [0001] The present invention relates to a transistor array substrate including transistors, and a display panel using a light emitting element that emits light by passing a current through the transistor array substrate. Background technique [0002] Organic electroluminescent display panels can be roughly divided into two types: passive drive mode and active matrix drive mode, but organic electroluminescent display panels with active matrix drive mode are better than passive drive modes in terms of high contrast and high definition. . For example, in the conventional organic electroluminescent display panel of the active matrix driving method described in Patent Document 1, an organic electroluminescent element (hereinafter referred to as an organic EL element), an organic electroluminescent element (hereinafter referred to as an organic EL element), a gate A drive transistor that applies a voltage signal corresponding to image data to the organic EL elemen...

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Problems solved by technology

[0006] However, since the electrode of the thin film transistor is designed on the premise that it is used as a transistor, in other words, it is not designed on the premise that a current flows through the light-emitting element, so it is a thin film as its name suggests. When current flows through the element, a voltage drop occurs due to the resistance of the wiring, causing a delay in the flow of current through the wiring.

In order to suppress voltage drop and current delay, it is desirable to reduce the resistance of the wiring. However, for this purpose, the metal layer constituting the source and drain electrodes of the transistor or the metal layer constituting the gate electrode must be thickened, or a sufficient current flow When laying out these metal layers to form a low-resistance wiring, the overlapping area of ​​the wiring and other wiring or conductors increases when viewed from above, and parasitic capacitance is generated during this period, which causes a delay in the flow of current. In the case of a so-called bottom emission structure that emits EL light from the side, the wiring blocks the light emitted from the EL element, so the numerical aperture, which is a ratio of the light emitting area, becomes small

In addition, if the gate electrode of the thin film transistor is thickened for low resistance, it is necessary to thicken the planarizing film to planarize the level of the gate electrode (for example, when the thin film transistor has an inverted staggered structure (reverse stagger structure). In this case, equivalent to the gate insulating film), the characteristics of the transistor may be greatly changed. In addition, if the source and drain electrodes are thickened, the etching accuracy of the source and drain electrodes may decrease, so there may be a problem with the transistor. bad influence

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