Semiconductor device

A semiconductor and conductive technology, applied in the direction of semiconductor devices, transistors, electric solid devices, etc., can solve the problems of limited low on-resistance, influence on the substrate, long current path, etc., to suppress the increase of resistance and reduce the conduction Effect of resistance, amount of reduction

Inactive Publication Date: 2006-05-24
SANYO ELECTRIC CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, flip-chip mounting has a problem that the on-resistance of the semiconductor device cannot be reduced because it affects the resistance of the substrate.
[0018] In addition, in the case of the wire bonding method, the frame fixed on the drain side contributes to the reduction of resistance, but it does not change the current flow to the substrate. Since the current path is long, there is also a limit to low on-resistance.

Method used

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  • Semiconductor device
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Examples

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Embodiment Construction

[0076] Take n-channel MOSFET as an example for reference Figure 1 to Figure 4 Embodiments of the present invention will be described in detail.

[0077] figure 1 It is a circuit schematic diagram showing the semiconductor device 20 of this embodiment.

[0078] The semiconductor device 20 of this embodiment is a MOSFET in which a plurality of MOS transistors 21 and 22 are arranged on a semiconductor substrate constituting a drain region. The MOSFET 20 is connected to a gate terminal G and is controlled by a control signal applied to the gate terminal G.

[0079] The MOS transistors 21 and 22 are integrated on one chip, and the terminals leading out to the outside are a gate terminal, a first source terminal S1, and a second source terminal S2. In addition, the drains of the plurality of MOS transistors 21 and 22 are connected in common, and are not led out to the outside as drain terminals.

[0080] Different potentials are applied to the first source terminal S1 and the ...

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Abstract

In a semiconductor device, the conventional monolithic dual MOSFET has a structure in which two MOSFET chips sharing a common drain region are arranged side by side, so the resistance value of the drain region is high, and the reduction of the on-resistance of the device is limited. In the semiconductor device of the present invention, the first MOS transistors connected to the first source electrode and the second MOS transistors connected to the second source electrode are alternately arranged adjacent to each other on one chip. Different potentials are respectively applied to the first source electrode and the second source electrode, and the switching control of the two MOS transistors is performed through one gate terminal. On-resistance can be reduced because current flows around the trench.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, to a semiconductor device that realizes miniaturization and low on-resistance of a switching element capable of switching a bidirectional current path. Background technique [0002] As switching elements, not only switching elements that switch between on and off, but also switching elements that switch the direction of a current path (direction of current flow) such as switching elements used in a secondary battery protection circuit, have been developed. [0003] FIG. 5 shows an example of a switching element for switching a bidirectional current path. [0004] FIG. 5(A) is a circuit diagram of a switching element. In the bidirectional switch element 30, a first MOSFET 31 and a second MOSFET 32 are connected in series. Furthermore, gate signals are applied to the respective gate terminals G1 and G2 to control the two MOSFETs. Then, the current path is switched accordin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04
CPCH01L27/0266H01L29/0696H01L29/41758H01L29/7825H01L2224/16245H01L2924/13091H01L2224/05573H01L2224/05568H01L2924/00014H01L2224/0554H01L2224/0603H01L2924/00H01L2224/05599H01L2224/0555H01L2224/0556
Inventor 柳田正道万代忠男
Owner SANYO ELECTRIC CO LTD
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